Depletion zone of a n-i junction

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SUMMARY

The discussion focuses on the depletion zone characteristics of a junction between n-doped and intrinsic Gallium Arsenide (GaAs). The participant explores the implications of treating intrinsic GaAs as a lightly doped p-type material, particularly in the context of a n-i junction configuration. The analysis suggests that the depletion zone will predominantly extend into the intrinsic region due to its wider width compared to the n-layer. This understanding is crucial for applications in photodiodes and RF switch devices, where the intrinsic region's width significantly influences the overall depletion width.

PREREQUISITES
  • Understanding of semiconductor physics and junction theory
  • Familiarity with Gallium Arsenide (GaAs) material properties
  • Knowledge of p-n junction behavior and depletion zone concepts
  • Basic principles of photodiodes and RF switch devices
NEXT STEPS
  • Research the electro-neutrality condition in semiconductor junctions
  • Study the characteristics of p-i-n structures and their applications
  • Examine the effects of doping concentration on depletion zone width
  • Learn about the design and operation of photodiodes using GaAs
USEFUL FOR

Electrical engineers, semiconductor physicists, and researchers involved in the design and analysis of GaAs-based devices, particularly those focusing on junction behavior and depletion zone characteristics.

IRobot
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Hi,
I am interested in a junction between n doped and intrinsic GaAs, specifically the localization and width of the depletion zone (where the built-in E field is). In a p-n junction the depletion zone is calculated under the condition of electro-neutrality, if I see i-GaAs as really really low doped p-GaAs, can I consider that the depletion zone will be mostly in the i-GaAs? (I have in mind a juxtaposition of one layer of n-GaAs with a layer of i-GaAs which has twice the width of the first one)
 
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In a p-i-n structure, the depletion zone looks similar to that of a p-n but with the additional i region in the center. In photodiodes and RF switch devices, the i region width d is (I think) much larger than the widths of the depletion zones in the p and n layers, so the total depletion width will be a little larger than d.
 
Well, in my case there is no p-layer behind the i region, the piece is really engineered like that. Or at least it is presented like that in the article based on this device.
At the moment, I am really inclined to look at the i region as a p region feebly doped in comparison to the n one, and in this case I would have a depletion layer entering over the i-GaAs.
 

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