Derivation of carrier density formula

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SUMMARY

The discussion focuses on deriving the carrier density formula, specifically n = (1/qV) ∫₀ⁱ τ dI, where n represents carrier density, q is the elementary charge, and V is the volume of the semiconductor active area. The user references additional equations from a textbook, including 1/τ = ∂R/∂n, R(n) = An + Bn² + Cn³, and I = qVR(n), to establish relationships between τ, I, and n. The user expresses difficulty in deriving the initial formula from these equations and seeks clarification on the relationship between τ and I as defined by 1/τ² = A² + (4B/qV)I.

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McKendrigo
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Hi there,

Not sure if this is in the best section, but here goes...

I'm trying to establish how a formula from a paper I have read has been derived. The formula is:

[tex]n=\frac{1}{qV} \int_0^I{\tau} dI[/tex]

where n is the carrier density, q is the elementary charge, V is the volume of the semiconductor active area.

From another source (textbook) I have:

[itex]\frac{1}{\tau} = \frac{\partial R}{\partial n}[/itex]

where

[itex]R(n) = An + Bn^2 + Cn^3[/itex]

and also the injected current I is related to n as follows:

[itex]I = qVR(n)[/itex]

I have a complete mental block on how whether I can derive the first equation from the following three - any help would be appreciated!
 
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I am also confused about something from the textbook: it uses equations 2,3 and 4 above to define the relationship between [tex]\tau[/tex] and I as being:

[tex]\frac {1}{\tau^2} = A^2 + \frac{4B}{qV}I}[/tex]

I just keep going round in circles when I try to derive this from equations 2,3 and 4 :(
 

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