A semiconductor p-n junction is fabricated where the doping concentration on the p and n sides of the junction is Na=1E18cm^-3 and Nd=1E16cm^-3 respectively. Given that ni=1.18E10cm^-3, T=300k calculate:
a) The majority and minority carrier concentrations in the neutral bulk regions on either side of the junction.
ni^2=(npo)(Na) and ni^2=(Pno)Nd
where npo is the concentration of electrons in the p doped region and pno is the concentration of holes in the n region
The Attempt at a Solution
using the above equations i got npo=139.24 cm^-3 and 13924cm^-3 for the minority concentrations. I want to ask if i did this right because i think these concentrations are kinda low
thanks for reading