Determining N-Type and P-Type Semiconductor Characteristics

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SUMMARY

This discussion focuses on determining the characteristics of N-type and P-type semiconductors through doping. Specifically, it examines a silicon sample at 300K doped with 3x106 boron (acceptor) and 2.9x106 phosphorus (donor) atoms. The primary method for identifying the semiconductor type involves calculating electron and hole concentrations. Once identified as N-type, the location of the Fermi level relative to the conduction band edge (Ec) can be determined using the equation Ef - Ei = kT ln(Nd/Ni).

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for the semiconductor which doping both donor and acceptor impurities...
for example,determine the hole and electron density thermal equlibrium densities and the location of fermi level with respect to Ec,for a silicon at 300K that is doped with 3x10^6 boron and 2.9x 10^6 phospohorus...the question i asked is this doping semiconductor is N or P type semiconductor?isn"t we need determine its is N and P type semiconductor first?
 
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No, you find out if it's primarily n or p-type by calculating the electron and hole concentration.
 
ooo..okay,thanks ya^^...then about finding the location of the fermi level with respect to Ec,after we had determine it is N type semiconnductor,then we use the equation of Ef-Ei=kt ln N(donor) / N(intrinsic)?
 

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