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Pn junction, diode and energy level of conduction band during forward biasing

  1. Feb 16, 2012 #1
    Hello Forum,

    I am looking at the energy levels between the n and p regions of a diode. The p-side has a conduction band that starts at a higher energy (same for the valence band).
    The n-side has the valence and condution bands that are at lower energy.

    The Fermi energy line is the same for both....

    I don't understand what happens to the energy level of the conduction band when the diode is forward biased....
    does the conduction band of the p side gets lower and the conduction band of the n-side gets higher? Why? Do they need to match?

  2. jcsd
  3. Feb 16, 2012 #2
    I guess I am talking about the energy gradient that an electron in the n-side needs to climb....

    Does forward biasing reduce that energy difference? Why does that energy difference exist?

    Again, The valence band and conduction band in N-Type material are slightly lower than that of P-Type material.
  4. Feb 16, 2012 #3
    Or is the tension on the string that plays the role of the centripetal force?
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