Pn junction, diode and energy level of conduction band during forward biasing

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SUMMARY

The discussion centers on the energy levels of the conduction band in a diode during forward biasing. It is established that in a diode, the conduction band of the p-side is at a higher energy level compared to the n-side. When forward biased, the energy difference between the conduction bands of the n-side and p-side decreases, facilitating electron movement from the n-side to the p-side. This energy gradient is crucial for understanding the behavior of electrons in semiconductor materials.

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fisico30
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Hello Forum,

I am looking at the energy levels between the n and p regions of a diode. The p-side has a conduction band that starts at a higher energy (same for the valence band).
The n-side has the valence and condution bands that are at lower energy.

The Fermi energy line is the same for both...

I don't understand what happens to the energy level of the conduction band when the diode is forward biased...
does the conduction band of the p side gets lower and the conduction band of the n-side gets higher? Why? Do they need to match?

thanks
fisico30
 
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I guess I am talking about the energy gradient that an electron in the n-side needs to climb...

Does forward biasing reduce that energy difference? Why does that energy difference exist?

Again, The valence band and conduction band in N-Type material are slightly lower than that of P-Type material.
 
Or is the tension on the string that plays the role of the centripetal force?
 

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