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I am trying to get my head around the energy band diagrams associated with forming a metal-semiconductor junction for both p and n type s/c. I am also consider for each type, the case of [itex]\phi[/itex]_{m}> [itex]\phi[/itex]_{n}(work function of metal greater than work function on s/c) and [itex]\phi[/itex]_{m}< [itex]\phi[/itex]_{n}(work function of metal less than work function of s/c).

I have come up with energy band diagrams (attached) for both cases with n-type s/c. The left shows both materials separated in a vacuum, and the right shows the bending of the bands when combined and under thermal equilibrium.

I have drawn partially the case of p-type with [itex]\phi[/itex]_{m}< [itex]\phi[/itex]_{p}with what I believe to be the correct bending of the bands.

However I am unsure where the Fermi level should equalise to for the p-type cases. I *think* that the charge carriers here are holes and as such there is a depletion region for [itex]\phi[/itex]_{m}< [itex]\phi[/itex]_{p}.

Any guidance in terms of drawing the band diagrams for both p-type cases would be much appreciated!

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# Metal-semiconductor junction with p-type and n-type and varying work functions

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