Hi All, I am trying to get my head around the energy band diagrams associated with forming a metal-semiconductor junction for both p and n type s/c. I am also consider for each type, the case of [itex]\phi[/itex]m > [itex]\phi[/itex]n (work function of metal greater than work function on s/c) and [itex]\phi[/itex]m < [itex]\phi[/itex]n (work function of metal less than work function of s/c). I have come up with energy band diagrams (attached) for both cases with n-type s/c. The left shows both materials separated in a vacuum, and the right shows the bending of the bands when combined and under thermal equilibrium. I have drawn partially the case of p-type with [itex]\phi[/itex]m < [itex]\phi[/itex]p with what I believe to be the correct bending of the bands. However I am unsure where the Fermi level should equalise to for the p-type cases. I *think* that the charge carriers here are holes and as such there is a depletion region for [itex]\phi[/itex]m < [itex]\phi[/itex]p. Any guidance in terms of drawing the band diagrams for both p-type cases would be much appreciated!