Energy gap from conductivity- temperature graph

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SUMMARY

The discussion focuses on calculating the energy gap (Eg) of an intrinsic semiconductor using conductivity values at various temperatures. The formula used is Eg = -2k (Δln(n)/Δ(1/T)), where k is the Boltzmann constant. Participants emphasize the importance of plotting ln(n) against 1/T to determine the slope, which directly relates to the energy gap. The conversation highlights the need for clarity on which temperature intervals to use for accurate calculations.

PREREQUISITES
  • Understanding of intrinsic semiconductor properties
  • Familiarity with the Boltzmann constant (k)
  • Knowledge of logarithmic functions and their applications
  • Ability to plot and interpret graphs
NEXT STEPS
  • Learn how to plot ln(n) vs. 1/T to determine the slope
  • Research the significance of the Boltzmann constant in semiconductor physics
  • Explore the relationship between conductivity and carrier concentration in semiconductors
  • Investigate methods for calculating energy gaps in different semiconductor materials
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Students and researchers in materials science, electrical engineering, and physics, particularly those studying semiconductor behavior and energy gap calculations.

life is maths
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Homework Statement




Hi, I have some values of conductivity in some temperatures.


0.01 at 400 Kelvin
10 at 600 K
70 at 700 K
1000 at 1000 K

And I'm asked to find the energy gap of this intrinsic semi- conductor.


Homework Equations





The Attempt at a Solution



I tried to plot a graph according to the formula

Eg= -2k [''Delta''lnn/ ''Delta''(1/T)]
(I tried to put the letter delta, but it does not show up.)

I think it is a graph similar to y= 1/x, but I couldn't figure out how to calculate the energy gap. And I'm not sure my graph is true. Could you please help me? Thanks for your time and effort.
 
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Start at the beginning. What is the relationship between conductivity (or carrier concentration) and temperature in an intrinsic semiconductor?

PS: Some useful symbols to copy-paste: δερσΔΩ∑∫∂ (or you can use the built-in latex feature)
 
As far as I know,

Eg= -2k\Deltalnn/(1/T)

I don't know any other way. I will try it again now, since the deadline is tomorrow.
I guess I will multiply the slope of lnn-1/T graph by -2k,the Boltzmann constant.

Thanks, Gokul43201. I know the latex stuff a bit, but that day my computer didn't respond well. And I would appreciate any help, since this subject really confuses me.
 
life is maths said:
I guess I will multiply the slope of lnn-1/T graph by -2k,the Boltzmann constant.
That should work. Your equation above is correct in that it is generally a good approximation for intrinsic semiconductors above 300K or so.
 
Thanks again, Gokul43201, I drew the graph, but I have another question now: Since I need to find the energy gap according to that formula, I get many values from the intervals. Which interval should I use or are there more than one value for energy gap? I'm totally lost.
Thank you.
 
I thought your plan was to plot ln(n) against ln(1/T) and find the slope of the line. If it wasn't, that's certainly the easiest way to do it, because the slope of the line gives Δln(n)/Δ(1/T).
 
Yes, you're so very right, ideasrule. How can I do such a foolish mistake? :( Then what way should I use? Thank you.
 
Eg is just -2k times the slope, according to your equation, so that should get you directly to your answer.
 
Thanks, but I do not have the concentration values, I only have conductivity and temperature. How am I supposed to find the energy gap from their graph?
 

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