Finding Free Electrons and Hole Concentration

Click For Summary
SUMMARY

This discussion focuses on calculating free electron and hole concentrations in silicon doped with aluminum at a concentration of 2 x 1016 cm-3. The intrinsic carrier concentration for silicon is given as 1.5 x 1010 cm-3, and the relationship between electron and hole concentrations is defined by the equation n0 * p0 = (ni)2. The majority carrier in this scenario is holes, making it a p-type semiconductor, while electrons are the minority carriers. The discussion also touches on the mobilities of these carriers at room temperature (300K).

PREREQUISITES
  • Understanding of semiconductor physics
  • Familiarity with doping concepts in silicon
  • Knowledge of intrinsic carrier concentration
  • Ability to apply the mass action law in semiconductor equations
NEXT STEPS
  • Research the calculation of carrier mobilities in semiconductors
  • Study the effects of temperature on semiconductor behavior
  • Learn about the differences between n-type and p-type semiconductors
  • Explore the role of trivalent and pentavalent atoms in doping silicon
USEFUL FOR

Students in electronics or materials science, semiconductor physicists, and anyone involved in the study of doping effects in silicon-based materials.

asd1249jf

Homework Statement


Silicon is doped with an Aluminum Concentration of 2 X 10^16 cm^-3

What are the free electron and hole concentrations at room temperature?

What are the electron and hole mobilities at 300K?

What is the majority carrier? What is the minority carrier?

Homework Equations


n_0 * p_0 = (n_i)^2 [[(Concentration of Electrons) * ( Hole Concentration) = (Intrinsic Carrier Concentration)^2]]

n_i = 1.5 X 10^10 cm^-3 [[For Silicon]]

The Attempt at a Solution



This is actually for my electronics class, but this is more of a chemistry type question so I posted here.

I've missed few lectures and I'm already lost. Can anyone just start me off, provide me some hints and equations I should use to find the mobility?

As for the majority/minority carrier part, I understand that if the semiconductor is n-type, electrons are the majority carrier and holes are the minority carriers and the opposite for the p-type. How do you tell which type of material this is?
 
Last edited by a moderator:
Physics news on Phys.org
Please try not to miss class. Presumably one's textbook contains the necessary information.

For semiconductor like Si, if one adds trivalent atoms (Group 13 (IIIA) e.g. B, Al, Ga) to the Si lattice, the trivalent atoms will tend to accept loosely bound valence electrons from the Si atoms. This will produce a p-type semiconductor. Similarly, if adds pentavalent atoms (Group 15 (VA), e.g. N, P, As, Sb) to the Si lattice, the pentavalent atoms will donate an electron to the lattice, and this produces an n-type material.

See this - http://hyperphysics.phy-astr.gsu.edu/hbase/solids/semcn.html

and http://ece-www.colorado.edu/~bart/book/book/chapter2/ch2_6.htm

http://www-ee.ccny.cuny.edu/www/web/crouse/EE339/Lectures/Charge_Carrier_Statistics.htm
 

Similar threads

  • · Replies 1 ·
Replies
1
Views
2K
Replies
2
Views
3K
  • · Replies 1 ·
Replies
1
Views
2K
  • · Replies 1 ·
Replies
1
Views
2K
  • · Replies 7 ·
Replies
7
Views
2K
  • · Replies 2 ·
Replies
2
Views
11K
Replies
5
Views
3K
Replies
3
Views
2K
  • · Replies 1 ·
Replies
1
Views
1K
  • · Replies 1 ·
Replies
1
Views
1K