Finding n and p of semiconductor given temp, NA, ND, and Ni

Click For Summary
SUMMARY

This discussion focuses on calculating the electron concentration (n) and hole concentration (p) in doped silicon semiconductors using temperature, acceptor concentration (NA), donor concentration (ND), and intrinsic carrier concentration (Ni). The relationship n*p=Ni^2 applies only to intrinsic semiconductors; for doped semiconductors, one must consider the effects of NA and ND. A recommended resource for understanding the necessary equations is available at the University of Colorado's website.

PREREQUISITES
  • Understanding of semiconductor physics
  • Familiarity with doping concepts in silicon
  • Knowledge of intrinsic and extrinsic carrier concentrations
  • Basic mathematical skills for solving equations
NEXT STEPS
  • Study the equations for calculating n and p in doped semiconductors
  • Learn about the temperature dependence of intrinsic carrier concentration (Ni)
  • Explore the impact of varying NA and ND on semiconductor behavior
  • Review the provided resource on extrinsic semiconductors for detailed explanations
USEFUL FOR

This discussion is beneficial for students and professionals in electrical engineering, particularly those studying semiconductor physics and device fabrication.

campeola46
Messages
1
Reaction score
0
I'm doing independent study on semiconductors to prepare for a future class and I'm having problems with some problems that concern finding the n and p of doped Silicon given only a temperature, NA, ND, and Ni. I understand that n*p=Ni^2, but, given that this means that n does not equal ND (and p does not equal NA) I cannot find what equations to use for the solution. I would greatly appreciate any help understanding how this works. Thank you in advance
 
Engineering news on Phys.org
n*p = Ni^2 only works for an intrinsic semiconductor. Once the semiconductor is doped, you need to take Na and Nd (the acceptor and donor concentrations) into account. A very clear webpage that explains the equations you need is: http://ecee.colorado.edu/~bart/book/extrinsi.htm
 

Thread 'uA709 op amp compensation'

Most likely this can only be answered by an "old timer". I am making measurements on an uA709 op amp (metal can). I would like to calculate the frequency rolloff curves (I can measure them). I assume the compensation is via the miller effect. To do the calculations I would need to know the gain of the transistors and the effective resistance seen at the compensation terminals, not including the values I put there. Anyone know those values?
View full post »

Similar threads

Diffusion current and carrier concentration equilibrium (unbiased)
  • · Replies 1 ·
Replies
1
Views
2K
Why n*p always equal to ni square? (semiconductor)
  • · Replies 6 ·
Replies
6
Views
17K
High-temperature semiconductors -- mission to Venus
  • · Replies 27 ·
Replies
27
Views
4K
Doped semiconductor material: identify n- p- type
  • · Replies 10 ·
Replies
10
Views
4K
Why Does N-Type Doping Result in Higher Hole than Electron Concentration?
  • · Replies 2 ·
Replies
2
Views
2K
Graduate How do acceptor energy levels form in p-doped semiconductors?
  • · Replies 2 ·
Replies
2
Views
3K
Graduate Carrier concentration temperature dependence; semiconductors
  • · Replies 1 ·
Replies
1
Views
13K
Semiconductors - Carrier Recombination
  • · Replies 1 ·
Replies
1
Views
2K
Semiconductor Carrier Concentration Basics
  • · Replies 2 ·
Replies
2
Views
3K
P-N Junction: connecting P-side to -ive terminal and N-side to +ive terminal
  • · Replies 1 ·
Replies
1
Views
2K