Doped semiconductor material: identify n- p- type

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Homework Help Overview

The discussion revolves around identifying whether a given slice of doped semiconductor material is n-type or p-type. Participants explore the physical principles and methods that could be employed for this identification, referencing the characteristics of charge carriers in each type.

Discussion Character

  • Exploratory, Conceptual clarification, Problem interpretation

Approaches and Questions Raised

  • Participants discuss the use of diagrams to illustrate the investigation process. There are inquiries about the appearance of doped semiconductors and the theoretical basis behind the images. Some suggest making electrical measurements to differentiate between negative and positive charge carriers, while others propose using the Hall effect as a method of investigation.

Discussion Status

The conversation is ongoing, with various methods being suggested for identifying the type of semiconductor. Some participants express uncertainty about the experimental setup required for the Hall effect, while others share personal experiences with different techniques, including temperature gradient methods. There is no explicit consensus on a single approach yet.

Contextual Notes

Participants note challenges such as the reliability of contact with semiconductor wafers and the variability in readings when using different probing techniques. There is also mention of specific materials like silicon and gallium arsenide in relation to the discussed methods.

moenste
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Homework Statement


You are given a small slice of doped semiconductor material but you do not know whether it is n-type or p-type Explain with the aid of a diagram the physical principles of an investigation which would enable you to identify the type.

2. The attempt at a solution
I searched on the net for some decent information on this topic, but most of the images are very similar to each other.

Image 1.

Image 2:
typessemicond.jpg


As I understand, a doped semiconductor means an inpure semiconductor, that is intentionally made so in order to be used as an n-type or p-type semiconductor.

These two pictures could be used as the answer for the question?

Also, how do doped semiconductors looks like? What's the theory about the pictures?
 
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moenste said:

Homework Statement


You are given a small slice of doped semiconductor material but you do not know whether it is n-type or p-type Explain with the aid of a diagram the physical principles of an investigation which would enable you to identify the type.

2. The attempt at a solution
I searched on the net for some decent information on this topic, but most of the images are very similar to each other.

Image 1.

Image 2:
typessemicond.jpg


As I understand, a doped semiconductor means an inpure semiconductor, that is intentionally made so in order to be used as an n-type or p-type semiconductor.

These two pictures could be used as the answer for the question?

Also, how do doped semiconductors looks like? What's the theory about the pictures?
Do you realize that in n-type material the charge carriers would be -ve electrons and that in p-type material the charge carriers would be +ve 'holes' ?
If you could make current flow the materials could you produce an effect that would enable you to see a difference between +ve and -ve charge carriers
 
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lychette said:
Do you realize that in n-type material the charge carriers would be -ve electrons and that in p-type material the charge carriers would be +ve 'holes' ?
If you could make current flow the materials could you produce an effect that would enable you to see a difference between +ve and -ve charge carriers
So the principle of investigation is to see whether there are "holes" in the graph?
 
moenste said:
So the principle of investigation is to see whether there are "holes" in the graph?
I would say that you are expected to design some practical investigation.
You are supplied with a sample of material. My first thought is to make some electrical measurements that would reveal the presence of -ve charge carriers or +ve charge carriers...got any ideas?
 
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lychette said:
I would say that you are expected to design some practical investigation.
You are supplied with a sample of material. My first thought is to make some electrical measurements that would reveal the presence of -ve charge carriers or +ve charge carriers...got any ideas?
Use the Hall effect?
 
moenste said:
Use the Hall effect?
Yes...you now need to find out the experimental set up.
 
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lychette said:
Yes...you now need to find out the experimental set up.
That's the thing, I don't quite understand how does a "small slide of doped semiconductor material" look like.

As I see it, we'll need to use an apparatus that creates magnetic field (like a magnet). Like shown here.
 
When working with semiconductors, I used a simple method to decide if a silicon slice was p type or n type. It worked by producing temperature gradient in the semiconductor wafer.(Wafers of several inches in diameter and 0.3-0.5 mm thick are available from the producers)
21610-6.jpg


You need a sensitive multimeter or a galvanometer. Connect the wafer to the negative input of the meter, and add a pin to the other lead. Warm up the pin and touch it to the wafer.
upload_2016-10-15_17-41-34.png


The figure shows an n type Si, with electrons as free carriers. Near the hot pin, they gain higher velocity and diffuse away. The hot spot becomes positive with respect to the cold part and the pointer of the meter will deflect in positive direction.
 
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ehild said:
When working with semiconductors, I used a simple method to decide if a silicon slice was p type or n type. It worked by producing temperature gradient in the semiconductor wafer.(Wafers of several inches in diameter and 0.3-0.5 mm thick are available from the producers)
21610-6.jpg


You need a sensitive multimeter or a galvanometer. Connect the wafer to the negative input of the meter, and add a pin to the other lead. Warm up the pin and touch it to the wafer.
View attachment 107474

The figure shows an n type Si, with electrons as free carriers. Near the hot pin, they gain higher velocity and diffuse away. The hot spot becomes positive with respect to the cold part and the pointer of the meter will deflect in positive direction.

I know of this technique but never found it reliable...getting good contact with the wafer was unpredictable and trying the probe over the surface can give conflicting readings. When working with semiconductor wafers I found gold wire probes to be most reliable ( most of this work was with gallium arsenide)
 
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@lychette: It worked quite well with silicon.
 
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  • #11
ehild said:
@lychette: It worked quite well with silicon.
OK...may be the way to go for moenste if all that is needed is 'identification'
 
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