Finding Nv to calculate Ef - Ev in doped silicon at 300K

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Question:

Silicon at T=300k contains acceptor impurity atoms at a density of Na=7*10^15 cm^-3. Determine Ef - Ev.

My solution:

By using the formula Ef -Ev= KT ln(Nv/Na) fermi energy type I had trouble computing this formula due to not having the value of Nv. So, I would appreciate if anyone who has the know how to help me obtain Nv?
 
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