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Hall Effect Measurements and Analysis

  1. Feb 28, 2016 #1
    Hi all,

    I am reading about hall effect measurements and analysis from an old physics book, A. C. Melissinos, Experiments in Modern Physics, for a lab class I'm taking.

    An experiment involving hall and resistivity measurements of a p-type germanium sample is performed and discussed. He notes that the temperature dependence from the Hall mobility is ~ T^-1.5 - but the actual hole mobility (derived from the resistivity measurements in the extrinsic region) is ~ T^-2. He says this is why they distinguish between Hall and lattice mobilities.

    My question: is it possible to use the Hall coefficient to obtain useful knowledge about the majority/minority mobilities? If not... do you just use the Hall coefficient as a means of measuring the dopant concentration and then use resistivity measurements to obtain everything else?

    Also what is the difference between Hall mobility and lattice mobility? Theoretically it seems as if they would be the same... the only failing point I see is there are some assumptions about the mean free path in the calculation.
  2. jcsd
  3. Feb 28, 2016 #2
    take help from below;


    The carrier concentration and mobility, as determined from the Hall effect, have been analyzed using a computer for a series of n-type silicon samples doped with Sb, P, and As.

    Mobility calculations, performed numerically, were based on the general treatment given by Herring and Vogt. Ionized-impurity scattering was calculated from two theories and compared with experiment.
    Lattice-scattering parameters for intervalley and accoustic modes were determined from a comparison of the results between theory and experiment, using as many as four intervalley phonons.
    The conclusions support the earlier work of Long, and a partial explanation of the disagreement with parameters determined from other measurements is suggested. Scattering by neutral impurities is found to be temperature dependent, unlike the theoretical model of Erginsoy.

    Impurity and Lattice Scattering Parameters as Determined from Hall and Mobility Analysis in n-Type Silicon
    P. Norton, T. Braggins, and H. Levinstein
    Phys. Rev. B 8, 5632 – Published 15 December 1973
  4. Feb 29, 2016 #3
    I'll look into this paper - thanks for your response
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