Hi all, I am reading about hall effect measurements and analysis from an old physics book, A. C. Melissinos, Experiments in Modern Physics, for a lab class I'm taking. An experiment involving hall and resistivity measurements of a p-type germanium sample is performed and discussed. He notes that the temperature dependence from the Hall mobility is ~ T^-1.5 - but the actual hole mobility (derived from the resistivity measurements in the extrinsic region) is ~ T^-2. He says this is why they distinguish between Hall and lattice mobilities. My question: is it possible to use the Hall coefficient to obtain useful knowledge about the majority/minority mobilities? If not... do you just use the Hall coefficient as a means of measuring the dopant concentration and then use resistivity measurements to obtain everything else? Also what is the difference between Hall mobility and lattice mobility? Theoretically it seems as if they would be the same... the only failing point I see is there are some assumptions about the mean free path in the calculation.