- #1
CoolDude420
- 199
- 9
Homework Statement:: Hi,
It's been a while since I have reviewed my basic semiconductor physics and I have some doubts.
In a P-Type doped semidoncutor material, I understand that Group III elements such as Boron are added to a Group IV element such as Silicon and thus the Boron atom has one free hole available for the creation of a covalent bond.
If an electric field is applied, electrons from other covalent bonds may have enough energy to jump and recombine Boron's free hole and thus create a covalent bond with another Silicon atom. The Boron atom now becomes an immobile negative ion. This will now leave a Silicon atom with a hole available for recombination with an electron and so the hole essentially moves from atom to atom.
My question is why do they say that holes are the majority charge carriers in P-type doped materials? Surely, for every hole that is being moved, it was created due to an electron moving too? Why isn't just the electron the carrier?
Relevant Equations:: N/A
See Above.
It's been a while since I have reviewed my basic semiconductor physics and I have some doubts.
In a P-Type doped semidoncutor material, I understand that Group III elements such as Boron are added to a Group IV element such as Silicon and thus the Boron atom has one free hole available for the creation of a covalent bond.
If an electric field is applied, electrons from other covalent bonds may have enough energy to jump and recombine Boron's free hole and thus create a covalent bond with another Silicon atom. The Boron atom now becomes an immobile negative ion. This will now leave a Silicon atom with a hole available for recombination with an electron and so the hole essentially moves from atom to atom.
My question is why do they say that holes are the majority charge carriers in P-type doped materials? Surely, for every hole that is being moved, it was created due to an electron moving too? Why isn't just the electron the carrier?
Relevant Equations:: N/A
See Above.