I The Role of Doping and Electric Fields in P-N Junction Formation?

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The discussion centers on the formation of P-N junctions and the behavior of electrons and holes within the depletion region. During this process, free electrons from the N-type region recombine with holes in the P-type region, creating a dynamic equilibrium where new electron-hole pairs are continuously formed and recombined. The electric field established in the depletion region prevents further diffusion of charge carriers, maintaining the separation of charge and the stability of the junction. When reverse bias is applied, the depletion region widens as electrons are drawn away from the N-side, but once the bias is removed, the region can return to its original state as electrons from the surrounding lattice neutralize the positive ions formed. Understanding these interactions is crucial for grasping semiconductor behavior and the principles of diode operation.
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Let'sthink said:
In a P region although immobile negative ions are there the overall region is neutral as there are equal number of mobile positively charged holes. But when this P region is beside The N region the excess electrons present there come on the P side and neutralize holes and thus the unbalanced immobile Indium ions help in creating electric field along with the unbalanced positively charged Phosphorous ions. So in brief preferred electron hole recombination creates depletion region and immobile impurity ions on both side create the electric field in equilibrium. Now you ask your original question and you get the correct answer. On this you can superimpose the applied bias and see what happens to the current flow, depletion region and the electric field present in the depletion region.
I have corrected some typographical mistake in the copied portion above.
 

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