Intrinsic and extrinsic silicon semiconductors

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SUMMARY

The discussion centers on the calculations related to intrinsic and extrinsic silicon semiconductors, specifically focusing on a wafer of intrinsic silicon doped with 3 x 1020 acceptor atoms per cubic meter. Participants are tasked with determining the electron and hole concentrations, the position of the Fermi level within the band-gap, and the conductivity of the doped wafer using constants such as q = 1.6 x 10-19C and ni = 1.45 x 1016m-3. The calculations require a solid understanding of semiconductor physics and the relevant equations.

PREREQUISITES
  • Understanding of semiconductor doping and carrier concentration
  • Familiarity with Fermi level concepts in band theory
  • Knowledge of electrical conductivity equations in semiconductors
  • Proficiency in using constants such as q, k, ni, and EG(Si)
NEXT STEPS
  • Calculate electron and hole concentrations in doped semiconductors
  • Learn about the Fermi level position in intrinsic and extrinsic semiconductors
  • Study the equations for conductivity in semiconductors
  • Explore the effects of temperature on semiconductor properties
USEFUL FOR

Students and professionals in electrical engineering, materials science, and physics, particularly those focusing on semiconductor technology and device fabrication.

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Can some1 please assist me with this question,i have tried every means possible with no avail.
1,
A wafer of intrinsic silicon is deliberately doped with 3 X 10^20/m^-3 of acceptor atoms
1, CAlculate the electron and hole concntration in the wafer
2,calc the position of the Fermi level in the band-gap
3calculate the conductivity of the wafer

Constants
q = 1.6 X 10^-19C,k = 1.38 X 10^-23J/K = 8.6 X 10^-5eV/K,ni = 1.45 X 10^16m-3,Nc= 2.5 X 10^25m^-3,EG(Si)= 1.1eV...
Thanks a lot in advance for your assiatance


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