Mass action law for semiconductor

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SUMMARY

The discussion centers on the Mass Action Law as it applies to N-type semiconductors in equilibrium. It establishes that while the electron concentration (n) increases and hole concentration (p) decreases, the overall carrier concentration remains constant, equal to the square of the intrinsic carrier concentration (ni_square). The key point is that N-type materials conduct better than intrinsic semiconductors due to the differing mobilities of electrons and holes, which directly affects conductivity at room temperature.

PREREQUISITES
  • Understanding of semiconductor physics
  • Familiarity with N-type and intrinsic semiconductor concepts
  • Knowledge of carrier concentration and mobility
  • Basic principles of equilibrium in semiconductor materials
NEXT STEPS
  • Research the differences in electron and hole mobility in semiconductors
  • Study the implications of the Mass Action Law on semiconductor performance
  • Explore the temperature dependence of carrier mobility in N-type materials
  • Investigate the role of doping concentrations in semiconductor conductivity
USEFUL FOR

Electrical engineers, semiconductor physicists, and students studying material science who are interested in the behavior and performance of N-type semiconductors.

hak555
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For Mass action law to hold for extrinsic material in equilibrium,
If n goes up and p goes down for an N-type material then overall carrier concentration is the same (equal to ni_square). So why does an N-type material conducts better than a an intrinsic semiconductor (presumably they have same number of carriers) at room temperature?
 
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