Low single charge carrier density materials?

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Discussion Overview

The discussion revolves around identifying materials with a single dominant charge carrier and extremely low charge carrier concentrations (around 10^15 cm^-3). Participants explore the suitability of various materials, including metals, semiconductors, and polymers, particularly at elevated temperatures, and consider the potential for modifying band structures.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant seeks materials with a single dominant charge carrier at low concentrations, noting that metals and extrinsically doped semiconductors typically have much higher densities.
  • Another participant suggests that 10^15 cm^-3 is achievable for silicon (Si), indicating that this level is a mid-range doping level, particularly for higher voltage devices.
  • A participant expresses uncertainty about the intrinsic charge carrier concentration of Si at elevated temperatures (around 700K) and seeks resources on the theory of intrinsic charge carrier densities for semiconductors, especially oxides.
  • It is noted that the intrinsic concentration of Si is a strong function of temperature, with a reference to a graph indicating around 10^16 cm^-3 at 700K, suggesting the need for wider band-gap materials.
  • Another participant points to semiconductors with a band gap of around 2 eV or more as potentially suitable for the application, referencing a table for guidance.
  • Discussion includes the mention of silicon carbide (SiC) and diamond as high-temperature semiconductors, with a note on the commercialization of SiC and the current status of diamond.

Areas of Agreement / Disagreement

Participants express differing views on the feasibility of achieving the desired charge carrier density in various materials, particularly silicon, at elevated temperatures. There is no consensus on the best material or approach, and the discussion remains unresolved regarding the optimal solution.

Contextual Notes

Participants acknowledge the dependence of intrinsic charge carrier concentrations on temperature and the potential need for wider band-gap materials, but do not resolve the implications of these factors for the original query.

uby
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Hello all,

I am trying to identify materials having a single dominant charge carrier having extremely low (on the order of 10^15 cm^-3) concentrations. Metals and extrinsically doped semiconductors, while both possessing a single dominant charge carrier (electrons or holes), tend to have carrier densities on the order of 10^23 cm^-3, which is about 8 orders of magnitude greater than I desire.

[Intrinsic semiconductors are unsuited for my application, since the concentration of electrons and holes are by definition equal (I need a single charge carrier to be dominant). Polymers are probably unsuited for my application as well, which will be above 400C.]

Are there any resources out there with data compilations for charge carrier densities at elevated temperatures?

Also, if there isn't any material that possesses such a low charge carrier density, is it possible to modify the band structure by application of a bias voltage or some other external means?

Thanks,
--uby
 
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10^15 cm^-3 is no problems at all for Si. The intrinsic concentration for Si is about 10^10 cm^-3 at 300k so 10^15 (either p or n) is pretty much a mid range doping level. Levels lower than this are commonly used in higher voltage Si devices.
 
uart said:
10^15 cm^-3 is no problems at all for Si. The intrinsic concentration for Si is about 10^10 cm^-3 at 300k so 10^15 (either p or n) is pretty much a mid range doping level. Levels lower than this are commonly used in higher voltage Si devices.

Thanks uart, I was unaware of this. My application will probably be around 700K or so, and I'm unsure what the intrinic concentration becomes at such an elevated temperature, but I will direct some effort into finding some Si data.

Do you happen to know of any resources that speak towards the theory of intrinsic charge carrier densities for semiconductors (especially oxides)?
 
uby said:
Thanks uart, I was unaware of this. My application will probably be around 700K or so, and I'm unsure what the intrinic concentration becomes at such an elevated temperature, but I will direct some effort into finding some Si data.

Do you happen to know of any resources that speak towards the theory of intrinsic charge carrier densities for semiconductors (especially oxides)?

Yeah the intrinsic concentration is a very strong function of temperature. I've got a graph here that indicates around 10^16 for Si at 700k, so it looks like you'd need to use a wider band-gap material. I don't know a great deal about the properties of semiconductors other than Si so maybe someone else might chime in with some good suggestions. I know that there are definitely other semiconductors available with wider band-gap, but I don't know much about their commercial availability.
 
Looking at the following table, semiconductors with a band gap of around 2 eV or more would probably be suitable for your application (Ni much less than 10^15 cm^-3 @ 700k).

http://en.wikipedia.org/wiki/Band_gap
 
Last edited:
This is why SiC and Diamond are seen as natural high temperature semiconductors.

Cree has commercialize the former fairly well. I don't know of anyone who's tackled diamond yet commercially.
 

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