MOSFET Channel length modulation

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SUMMARY

The discussion centers on the drain current expression for MOSFETs in saturation as presented in Sedra & Smith's microelectronic circuits, specifically the formula iD = 1/2µpCox(W/L)Vov²(1+VDS/VA). Participants debate its accuracy compared to the expression found on Wikipedia, which emphasizes that no single formula can accurately model contemporary devices. The consensus suggests that for precise modeling, one should utilize computer simulations, while derivations of these formulas can provide valuable insights into the underlying principles of channel length modulation.

PREREQUISITES
  • Understanding of MOSFET operation and characteristics
  • Familiarity with the concepts of saturation and drain current
  • Knowledge of the Shichman-Hodges model
  • Basic skills in using computer simulation tools for circuit modeling
NEXT STEPS
  • Study the Shichman-Hodges model for MOSFETs in detail
  • Learn about computer-aided design (CAD) tools for semiconductor modeling
  • Explore derivations of the drain current equations in MOSFETs
  • Investigate the impact of channel length modulation on device performance
USEFUL FOR

This discussion is beneficial for electrical engineers, microelectronics students, and researchers focused on semiconductor device modeling and performance optimization.

daudaudaudau
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As wikipedia states, no formula accurately models a contemporary device, for this you must resort to a computer model. Nonetheless, perhaps you might find a derivation of the formula to be illuminating? :s

See http://www.onmyphd.com/?p=channel.length.modulation
 

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