The discussion centers on the influence of doping in semiconductors on photon absorption, particularly in the context of spectroscopic methods like Raman spectroscopy. Participants explore how the introduction of dopants, such as nitrogen in titanium dioxide, affects the absorption characteristics and the resulting spectroscopic measurements.
Participants generally agree that doping affects the properties of semiconductors and their interaction with photons, but there is no consensus on the specific mechanisms or implications of this influence.
There are limitations in understanding the precise mechanisms by which dopants affect photon absorption, including potential dependencies on specific definitions and the complexity of the interactions involved.
This discussion may be of interest to researchers and students in materials science, semiconductor physics, and spectroscopy, particularly those exploring the effects of doping on optical properties.
From https://blue-scientific.com/news/2019/10/semiconductors-raman-spectroscopy/:photonwanderer said:I have a question regarding the absorption of photons in a semiconductor. Assuming I have a doped semiconductor (e.g. nitrogen in titaniumdioxide) removing electrons and creating holes. Do the created holes influence the absorption of photons and therefore have a direct impact on spectroscopic methods such as Raman spectroscopy?
The photons in Raman spectroscopy couple to the vibrational modes (phonons) of the semiconductor crystal. Dopants are defects in the crystal structure that modify the vibrational modes and measurably alter the Raman scattering.photonwanderer said:I know this is possible, but I do not understand how dopant concentrations interfere with the photons. Could you explain this to me?