Photon absorption influenced by semiconductor doping?

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SUMMARY

The discussion centers on the influence of dopants, specifically nitrogen in titanium dioxide, on photon absorption in semiconductors and its implications for spectroscopic methods like Raman spectroscopy. It is established that the introduction of dopants creates holes by removing electrons, which directly affects the absorption of photons. This alteration modifies the vibrational modes of the semiconductor crystal, thereby impacting Raman scattering measurements. Understanding these interactions is crucial for accurate spectroscopic analysis of semiconductor materials.

PREREQUISITES
  • Understanding of semiconductor doping processes
  • Familiarity with Raman spectroscopy techniques
  • Knowledge of vibrational modes in crystal structures
  • Basic principles of photon absorption in materials
NEXT STEPS
  • Research the effects of nitrogen doping in titanium dioxide on optical properties
  • Learn about the relationship between dopant concentrations and Raman scattering
  • Explore advanced Raman spectroscopy techniques for characterizing semiconductor materials
  • Investigate the role of phonons in semiconductor physics
USEFUL FOR

Researchers, materials scientists, and spectroscopists interested in semiconductor properties and their characterization through Raman spectroscopy will benefit from this discussion.

photonwanderer
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I have a question regarding the absorption of photons in a semiconductor. Assuming I have a doped semiconductor (e.g. nitrogen in titaniumdioxide) removing electrons and creating holes. Do the created holes influence the absorption of photons and therefore have a direct impact on spectroscopic methods such as Raman spectroscopy?
 
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photonwanderer said:
I have a question regarding the absorption of photons in a semiconductor. Assuming I have a doped semiconductor (e.g. nitrogen in titaniumdioxide) removing electrons and creating holes. Do the created holes influence the absorption of photons and therefore have a direct impact on spectroscopic methods such as Raman spectroscopy?
From https://blue-scientific.com/news/2019/10/semiconductors-raman-spectroscopy/:
What Can You Measure?
With Raman you can generate images and characterise all types of semiconductors, including Si, carbon-based, III-V’s and polymers, as well as superconductors. This provides a wealth of information, including:
  • Chemical composition eg alloy fractions of compound semiconductors
  • Polytypes eg 4H-SiC and 6H-SicC
  • Stress and strain
  • Dopant concentrations
  • Thickness of thin films
  • Crystal structure type and orientation
  • Crystal quality
  • Defects
  • Uniformity and purity
  • Device temperature
 
I know this is possible, but I do not understand how dopant concentrations interfere with the photons. Could you explain this to me?
 
photonwanderer said:
I know this is possible, but I do not understand how dopant concentrations interfere with the photons. Could you explain this to me?
The photons in Raman spectroscopy couple to the vibrational modes (phonons) of the semiconductor crystal. Dopants are defects in the crystal structure that modify the vibrational modes and measurably alter the Raman scattering.
 

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