A Photon absorption influenced by semiconductor doping?

[photonwanderer]

I have a question regarding the absorption of photons in a semiconductor. Assuming I have a doped semiconductor (e.g. nitrogen in titaniumdioxide) removing electrons and creating holes. Do the created holes influence the absorption of photons and therefore have a direct impact on spectroscopic methods such as Raman spectroscopy?

 

[renormalize]

I have a question regarding the absorption of photons in a semiconductor. Assuming I have a doped semiconductor (e.g. nitrogen in titaniumdioxide) removing electrons and creating holes. Do the created holes influence the absorption of photons and therefore have a direct impact on spectroscopic methods such as Raman spectroscopy?

From https://blue-scientific.com/news/2019/10/semiconductors-raman-spectroscopy/:
What Can You Measure?
With Raman you can generate images and characterise all types of semiconductors, including Si, carbon-based, III-V’s and polymers, as well as superconductors. This provides a wealth of information, including:

• Chemical composition eg alloy fractions of compound semiconductors
• Polytypes eg 4H-SiC and 6H-SicC
• Stress and strain
• Dopant concentrations
• Thickness of thin films
• Crystal structure type and orientation
• Crystal quality
• Defects
• Uniformity and purity
• Device temperature

 

[photonwanderer]

I know this is possible, but I do not understand how dopant concentrations interfere with the photons. Could you explain this to me?

 

[renormalize]

I know this is possible, but I do not understand how dopant concentrations interfere with the photons. Could you explain this to me?

The photons in Raman spectroscopy couple to the vibrational modes (phonons) of the semiconductor crystal. Dopants are defects in the crystal structure that modify the vibrational modes and measurably alter the Raman scattering.