Semiconductor temperature

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Discussion Overview

The discussion centers around the relationship between temperature and the number of conduction electrons in n-doped semiconductors, particularly in comparison to intrinsic semiconductors. Participants explore the temperature dependence of electron concentration and the implications of doping on this relationship.

Discussion Character

  • Exploratory
  • Technical explanation
  • Conceptual clarification

Main Points Raised

  • One participant questions how the number of conduction electrons in an n-doped semiconductor depends on temperature, suggesting that the intrinsic density may be relevant since n is much larger than p.
  • Another participant recommends consulting John McKelvey's "Solid State and Semiconductor Physics" for a detailed explanation of how electron and hole concentrations vary with temperature.
  • A different participant suggests looking into vacuum diodes and semiconductor diodes for more reliable information on temperature dependence.
  • One participant outlines three temperature regions affecting conduction electrons: at very low temperatures, carriers are frozen out; at intermediate temperatures, all donor states are ionized and electron concentration is temperature-independent; and at high temperatures, intrinsic carrier concentration may equal or exceed donor concentration, leading to intrinsic behavior.

Areas of Agreement / Disagreement

Participants present multiple perspectives on the temperature dependence of conduction electrons in n-doped semiconductors, with no consensus reached on a definitive explanation or model.

Contextual Notes

Participants mention various temperature regions and their effects on carrier concentration, but the discussion does not resolve the assumptions or dependencies involved in these models.

Who May Find This Useful

This discussion may be of interest to those studying semiconductor physics, particularly in understanding the effects of temperature on conduction in doped and intrinsic materials.

demLara
Hello
I have got a question and i don't know the answer. Please help me.
I have a n doped semiconductor. How does the number of conduction electrons depends on temperature and compare the situation to an intrinsic semiconductor?
Do i look at the intrinsic density, because when it is n doped than n is much bigger than p and the multiplication will be dominated by n. Then i would know the temperature dependence for intrinsic T^3/2 *exp ?
Thanks in advance
 
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The answer is rather long. I'd suggest reading John McKelvey's "Solid State and Semiconductor Physics". He fully develops how electron and hole concentration vary with temperature.
 
Try to read about vacuum diode, it uses heat depend transfer. Look also at semiconductor diode to have more reliable info.
 
I can offer you a short answer.
There are three temperature regions. At very low temperatures, that is, kBT <is less than ionization energy of the donor state, the carriers are frozen out - number of electrons in the conduction band is vary small and the material is essentially an insulator. This occurs at cryogenic temperatures.
The second region is when the kBT is larger than ionization energy of the donor states but much less than energy gap. In this region, all the donor states are ionized and the number of electrons is essentially independent of the temperature.
The third regions is when the temperature is large enough so that the intrinsic carrier concentration becomes equal or greater than the concentration of donors.
In that region, the semiconductor is pretty much intrinsic with the same number of electrons and holes.
 

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