SUMMARY
This discussion focuses on simulating a semiconductor substrate with a metal coating using COMSOL Multiphysics. The primary concern is the calculation of DC properties and the implications of the Schottky barrier in the metal-semiconductor interface. Users must consider the thickness of the metal film, as this affects mesh size during simulation. The complexity of the model increases if the semiconductor substrate cannot be approximated as an insulator, particularly when calculating I-V characteristics of the semiconductor/metal heterojunction.
PREREQUISITES
- Understanding of semiconductor physics, specifically Schottky barriers.
- Familiarity with COMSOL Multiphysics software for simulation.
- Knowledge of DC electrical properties and I-V characteristics.
- Experience with mesh generation and its impact on simulation accuracy.
NEXT STEPS
- Research how to model Schottky barriers in COMSOL Multiphysics.
- Learn about mesh refinement techniques for thin film simulations.
- Explore the calculation of I-V characteristics in semiconductor devices.
- Investigate boundary conditions (B.C) relevant to semiconductor/metal interfaces.
USEFUL FOR
This discussion is beneficial for electrical engineers, materials scientists, and researchers involved in semiconductor device simulation and design, particularly those using COMSOL for modeling metal-semiconductor interactions.