Transmission over a step semiconductor heterojuction

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SUMMARY

The discussion centers on the calculation of the electron transmission function T(E) over a potential step in a semiconductor heterojunction using T-matrices. The analysis incorporates boundary conditions that account for differing effective electron masses on either side of the step, specifically Y1(x0) = Y2(x0) and 1/m1*d/dxY1(x0) = 1/m2*d/dxY2(x0). The findings indicate that T(E) approaches unity only when the effective masses are equal; otherwise, T(E) remains less than unity, suggesting that reflection occurs at the heterojunction even at high energies.

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  • Understanding of T-matrix formalism in quantum mechanics
  • Knowledge of semiconductor physics, particularly heterojunctions
  • Familiarity with boundary conditions in quantum mechanics
  • Concept of effective electron mass in semiconductor materials
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John Loven
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I have calculated the electron transmission function T(E) over a potential step using T-matrices. I model a semiconductor heterojunction, which requires different effective electron masses on either side of the step.

We have 2 boundary conditions at the step at x = x0:

Y1(x0) = Y2(x0)
1/m1*d/dxY1(x0) = 1/m2*d/dxY2(x0)

Note that the second boundary condition is not the standard one, since we have to account for the different masses, in order to have current conservation.

When plotting T(E) it only approaches unity for increasing E, if the masses are equal. If they are not equal T(E) approaches a value less than unity.I'm just wondering if this result is correct? Is there always some reflection at a heterojunction with different effective electron masses, even for very large energies?

Thanks,

John
 
I never worked with models where the electron mass changes as function of position, but the result does not surprise me.
 

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