Troubleshooting Semiconductor Problems: Calculating Ef - Ev at T=300K

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SUMMARY

The discussion focuses on calculating the energy difference between the Fermi level (Ef) and the valence band edge (Ev) for silicon at a temperature of 300K, given an acceptor impurity density (Na) of 7 x 1015 cm-3. The formula used is Ef - Ev = kT ln(Nv/Na), where k is the Boltzmann constant and T is the temperature in Kelvin. The main challenge presented is the lack of the valence band density of states (Nv), which is necessary for completing the calculation. A resource link is provided for further assistance in obtaining Nv.

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  • Understanding of semiconductor physics, specifically Fermi level concepts.
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  • Research the calculation of Nv for silicon at T=300K using semiconductor physics textbooks.
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Question:

Silicon at T=300k contains acceptor impurity atoms at a density of Na=7*10^15 cm^-3. Determine Ef - Ev.

My solution:

By using the formula Ef -Ev= KT ln(Nv/Na) fermi energy type I had trouble computing this formula due to not having the value of Nv. So, I would appreciate if anyone who has the know how to help me obtain Nv?
 
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Thanx so much.
 

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