daffoddill
- 8
- 0
how the conduction band offset varies with Al concentration?? what is the different?
The discussion focuses on the variations in conduction band offset (CBO) with aluminum (Al) concentration in AlGaAs/GaAs structures. It establishes that AlAs/GaAs exhibits a type I band offset, where AlAs has a larger band gap compared to GaAs. As the Al concentration increases, the CBO rises, reaching a maximum value at AlAs/GaAs. For a structure like AlGaAs/GaAs/AlGaAs, the increase in Al concentration directly correlates with an increase in the CBO due to the widening band gap.
PREREQUISITESResearchers, semiconductor physicists, and materials scientists interested in the properties and applications of AlGaAs/GaAs structures and their conduction band offsets.