Understanding Band Bending at Metal-Semiconductor Junctions

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SUMMARY

The discussion focuses on band bending at metal-semiconductor junctions, specifically addressing how the energy levels of the valence band (Ev) and conduction band (Ec) are affected when these materials are joined. It is established that the Fermi levels of the metal and semiconductor differ, leading to electron and hole flow until thermal equilibrium is achieved. The formation of either an ohmic or Schottky contact is determined by the relative work function differences between the two materials. Importantly, the energy levels of Ec and Ev in the semiconductor bulk remain unchanged despite the junction's influence.

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Excom
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Hi everyone.

Is there anyone that can explane the band bending, whiche takes plane when a metal and a semiconductor are joined together?

In illustrations of the band bending, it looks like that the energy of the valence and conduction band far from the junction have been lowered or raised. Is that true? And if yes, how can that be true? I mean, the electrons far from the junction, they are probably not affected by the junction.
 
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If there is a difference in the Fermi levels of the respective materials (metal and semiconductor), and there usually is, then electrons/holes will flow from one to the other until thermal equilibrium is obtained. Depending on the relative workfunction differences of the metal and semiconductor, an ohmic or Schottky contact will be formed. And it doesn't appear that the energy of Ec and Ev have been raised or lowered. chi (energy difference between Evac and Ec remains the same for semiconductor bulk far from the contact point)
 
Okay, thanks.
 

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