Re - (figure 2) - http://www.national.com/rap/Applicat...570,24,00.html
For analyzing any of these circuits the tricky part is actually proving that the Vbe forward voltage has a temperature coefficient of about -2mV/C (at room temperature and typical operating current densities). If we take it as "given" that Vbe is approx 600mV with temp-co -2mV/C then the analysis of the diode string circuit is as follows.
V_o = 7 V_T \, \ln(\frac{I}{I_s}) - 6 V_T \, \ln(\frac{I}{49 I_s})
(note that the current in the right branch is 1/49th of the current in the left branch).
Rearranging,
V_o = V_T \, \ln(\frac{I}{I_s}) + 6 V_T \, ( \ln(\frac{I}{I_s}) - \ln(\frac{I}{49 I_s} ))
Using the subtraction property of log gives,
V_o = V_T \, \ln(\frac{I}{I_s}) + 6 V_T \, \ln(49)
(Where "I" is the current of approx 1mA in the left diode string).
The first term in the above equation is the normal forward voltage of a single diode, so we assume it is approx 600mV with a temp-co of approx -2mV/C.
Now consider the second term, 6 V_T \, \ln(49). At room temperature it evaluates to approximately 600 mV, and since V_T is the only temperature dependency of this term it has a positive temp-co equal to (6 k \ln 49)/q, which is almost exactly +2 mV/C. (Note that the number of diodes and the relative currents would have been chosen to so as to make this so.)
* BTW. In building any of these bandgap circuits, the Vbe voltage of a BJT actually works better than typical diodes as they obey the ideal logarithmic diode equation more closely.