Why does a transistor in saturation act like a short circuit?

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Discussion Overview

The discussion revolves around the behavior of an NPN transistor in saturation mode, specifically addressing why it appears to act like a short circuit. Participants explore the underlying mechanisms of charge carrier movement between the emitter and collector, as well as the implications of forward-biased junctions.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested

Main Points Raised

  • One participant questions how charge carriers pass from the emitter to the collector when both junctions are forward biased, suggesting confusion about the role of electric fields and diffusion currents.
  • Another participant provides a simplified explanation that in saturation, both the base-emitter and collector-base junctions are forward biased, allowing high currents to flow.
  • A different participant asserts that the collector-emitter voltage remains approximately 0.2 V in saturation, emphasizing the small size and lower doping of the base region compared to the emitter and collector.
  • Concerns are raised about the movement of electrons in the collector-base junction, questioning the influence of the electric field in the depletion region and the nature of charge carriers involved.
  • Further clarification is sought regarding the flow of electrons specifically from the emitter to the collector, rather than from the base to the collector.

Areas of Agreement / Disagreement

Participants express differing views on the mechanisms of charge carrier movement in saturation mode, with no consensus reached on the specifics of how electrons flow from the emitter to the collector.

Contextual Notes

Participants highlight the complexity of the charge carrier dynamics in a forward-biased transistor, noting the influence of junction biases and the characteristics of the base region, but do not resolve the underlying assumptions or conditions affecting these dynamics.

Helena Wells
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TL;DR
This thread is about my questions on the mechanism of how current passes from emitter to collector in a saturated BJT.
If I have an NPN transistor and let's say we set the base voltage higher than the collector voltage.(Emitter is connected to GND).There are 2 currents flowing in the base because we have two forward biased junctions inside the diode , 1 is the current flowing from emitter to base and 1 is the current flowing from collector to base.

What I don't understand is why the transistor acts like a short circuit. I know that if we connect an emitter resistor the total current flowing through that resistor will be equal to Vc-Ve / Re (saturation voltage is neglected here)however how do the charge carriers pass from the emitter to the collector at first place?

I mean in saturation mode both junctions(base-emitter and collector-base) are forward biased so therefore the electric field of the depletion region cannot accelerate the charge carriers in opposite direction of the diffusion current because there is a net voltage which opposes that so the collector emitter current cannot be current due to that but it can't also be diffusion current because electrons don't naturaly flow from P type to N type region (base to collector).What am I missing here?

I am sorry I ask this question again but the link provided didnt answer my questions I don't know why I submitted I did idk.
 
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Simple answer: In Saturation both the E-B and the B-C diodes are forward biased, allowing high currents to flow.

Slightly more advanced, but not terribly satisfying:
https://learn.sparkfun.com/tutorials/transistors/operation-modes

Rather deep into the physics with many external links:
https://en.wikipedia.org/wiki/Bipolar_junction_transistor
Note especially the figure about 1/4 down the page, under the "Structure" heading.

(above found with:
https://www.google.com/search?&q=bjt+saturation+mode+condition)

Cheers,
Tom
 
Helena Wells said:
What I don't understand is why the transistor acts like a short circuit.
No - it is not. The collector-emiiter voltage will still be app. Vce=0.2 V. (npn case).

Helena Wells said:
I mean in saturation mode both junctions(base-emitter and collector-base) are forward biased so therefore the electric field of the depletion region cannot accelerate the charge carriers in opposite direction of the diffusion current ...
The base region is extremely small and considerably less doped than the emitter (and collector) region. Therefore, the collector voltage (still above the emitter voltage) allows the majority of the electrons from the emitter (npn case) move to the collector - in addition to the carriers coming from the forward biased B-C junction.
 
LvW said:
No - it is not. The collector-emiiter voltage will still be app. Vce=0.2 V. (npn case).The base region is extremely small and considerably less doped than the emitter (and collector) region. Therefore, the collector voltage (still above the emitter voltage) allows the majority of the electrons from the emitter (npn case) move to the collector - in addition to the carriers coming from the forward biased B-C junction.
Yes ok but I agree the base region is very small and electrons flowing in the base from the collector are very likely to be found at the collector. However why are electrons inside the BC junction move to the collector since there is nothing that will pull them to the collector the electric field inside the depletion region is countered by VBC voltage if they were to be pulled as minority charge carriers and they can't be majority charge carriers because electrons don't move from P to N type region.
 
Helena Wells said:
However why are electrons inside the BC junction move to the collector since there is nothing that will pull them to the collector the electric field inside the depletion region is countered by VBC voltage if they were to be pulled as minority charge carriers and they can't be majority charge carriers because electrons don't move from P to N type region.
As you have said at the beginning - the B-C junction is forward biased. Is this not enough to accept a flow of electrons from B to C ?
 
I ask for flow from E to C not from B to C.
 

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