- #1
ovais
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Hello guys I have a question about semiconductor, suppose I have a semiconductor say silicon at room temperature. The forbidden energy gap in case of Silicon is 1.1eV. Suppose I give I introduced an electric field(or by any other way give energy) which could give each electron an energy more than 1.1. What will happen then?
I suspect with an energy of say 1.2eV only few(relatively) electrons will go to conduction band breaking the valence bond. Because for other electrons in valence band the gap will be even more than 1.1eV. As forbidden gap is defined as the difference between highest energy level of valence band and lowest (available) energy in conduction band. So it should not take equal energy to take electrons from the different valence bond . in other words it would take different energy to break different bonds. Am I correct? My other question is what will happen if I give very high amount of energy so that I am successful in breaking all the bonds between silicon atoms? Will it reduces to isolated atoms then?
Regards
I suspect with an energy of say 1.2eV only few(relatively) electrons will go to conduction band breaking the valence bond. Because for other electrons in valence band the gap will be even more than 1.1eV. As forbidden gap is defined as the difference between highest energy level of valence band and lowest (available) energy in conduction band. So it should not take equal energy to take electrons from the different valence bond . in other words it would take different energy to break different bonds. Am I correct? My other question is what will happen if I give very high amount of energy so that I am successful in breaking all the bonds between silicon atoms? Will it reduces to isolated atoms then?
Regards