Discussion Overview
The discussion centers around the unit Mrad(Si) in the context of irradiation damage to semiconductor devices, specifically focusing on its meaning and implications for measuring radiation effects in silicon-based detectors.
Discussion Character
- Exploratory, Technical explanation
Main Points Raised
- One participant seeks clarification on the meaning of Mrad(Si) as mentioned in a paper about irradiation damage.
- Another participant provides a link to a Wikipedia page about the rad unit, suggesting it as a resource for understanding the term.
- A participant expresses curiosity about the notation (Si), speculating that it might refer to "system international," while noting the capitalization difference.
- One participant explains that one rad corresponds to 100 ergs per gram deposited in a silicon solid state PIN diode detector, detailing the conversion constant related to energy deposited per electron-hole pair and mentioning the variability based on ionization density.
- A later reply acknowledges the explanation provided, indicating appreciation for the clarification.
Areas of Agreement / Disagreement
Participants generally agree on the technical aspects of the unit and its application, but there is no consensus on the precise interpretation of the (Si) notation, as one participant's speculation remains unconfirmed.
Contextual Notes
The discussion does not resolve the ambiguity regarding the meaning of (Si) and relies on assumptions about the context in which Mrad is used.