Mrad(Si) refers to the radiation dose absorbed by silicon semiconductor devices, specifically indicating the energy deposited in the material. One rad corresponds to 100 ergs per gram, relevant in the context of measuring electron-hole pairs in silicon detectors. The notation (Si) signifies that the measurement is specific to silicon, not a reference to the International System of Units. The energy conversion for electron-hole pairs is approximately 3.7 eV, which can vary based on ionization density. Understanding these concepts is crucial for evaluating radiation damage in semiconductor applications.
