SUMMARY
The band gap for a GaAsP semiconductor LED emitting red light at a wavelength of 650 nm is calculated to be 1.9 eV using the formula E = hc/λ. The calculation involves substituting the constants for Planck's constant (h) and the speed of light (c) into the equation, confirming that the value aligns with expected ranges for GaAsP. Additionally, it is noted that the band gap of GaAsP can be adjusted to tune the emission wavelength, providing flexibility in LED applications.
PREREQUISITES
- Understanding of semiconductor physics
- Familiarity with the equation E = hc/λ
- Knowledge of band gap energy concepts
- Basic principles of light-emitting diodes (LEDs)
NEXT STEPS
- Research the properties of GaAsP semiconductors
- Learn about the process of tuning band gaps in semiconductors
- Explore the applications of GaAsP in LED technology
- Investigate the relationship between wavelength and energy in photonics
USEFUL FOR
Electrical engineers, semiconductor researchers, and professionals involved in LED technology and photonics who seek to understand the properties and applications of GaAsP semiconductors.