What is the doping and hole concentration?

In summary, the conversation discusses the show law of mass action and finding dopant concentration and hole concentration. The equations and solution for finding the concentrations are also shared, along with a discussion of the estimated doping concentration at different temperatures.
  • #1
unscientific
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13

Homework Statement



(a) Show law of mass action.
(b) Find dopant concentration and hole concentration.[/B]
2012_B6_Q3.png


Homework Equations

The Attempt at a Solution



Part(a)[/B]
Bookwork.

Part(b)

Letting the doping concentration be ##D##, we have:
[tex]D = n - p[/tex]
For ##I = n_{intrinsic} = p_{intrinsic}##, we have:
[tex]D^2 + 4I^2 = (n+p)^2 = (n-p)^2 + 4np[/tex]

Which gives us the result
[tex]n = \frac{1}{2}\left( \sqrt{D^2 + 4I^2} + D \right) [/tex]
[tex]p = \frac{1}{2}\left( \sqrt{D^2 + 4I^2} - D \right) [/tex]

For the doping to work at 750K, I estimate the doping concentration to be ##D \approx n_{intrinsic} = \sqrt{np}##.
At 750 K,
[tex]D = \sqrt{np} = 1.7 \times 10^{23}[/tex]
At 300K,
[tex]I = \sqrt{np} = 1 \times 10^{19} [/tex]

Since ##D >> I##, we have
[tex]p \approx \frac{I^2}{D} = 6 \times 10^{14} [/tex]

Is this right?
 
  • #3
bumpp
 
  • #4
bumppp
 
  • #5
bumpp dope
 
  • #6
bumping on dope
 
  • #7
bumping dope concentration?
 
  • #8
bump on dopant concentration
 
  • #9
bumpp
 
  • #10
BUMPP
 

1. What is doping in terms of semiconductors?

Doping is the process of intentionally introducing impurities into a semiconductor material in order to change its electrical properties. This is done by adding small amounts of atoms with either excess or deficient electrons, known as dopants, to the semiconductor crystal lattice.

2. What is the difference between n-type and p-type doping?

N-type doping involves adding atoms with an extra electron to the semiconductor, creating an excess of negatively charged carriers known as electrons. P-type doping involves adding atoms with one less electron, creating a deficiency of electrons and resulting in positively charged carriers known as holes.

3. What is hole concentration in a doped semiconductor?

Hole concentration refers to the number of holes present in a doped semiconductor material. Holes are the absence of an electron in the valence band of a semiconductor, and their concentration is determined by the amount of p-type dopant added to the material.

4. How does doping affect the conductivity of a semiconductor?

Doping can significantly affect the conductivity of a semiconductor. N-type doping increases the number of free electrons, making the material more conductive, while p-type doping creates holes that can also contribute to the conductivity of the material.

5. What is the relationship between doping and the band gap of a semiconductor?

Doping can impact the band gap of a semiconductor. N-type doping can decrease the band gap, making it easier for electrons to move between energy levels, while p-type doping can increase the band gap, making it more difficult for electrons to move. This can affect the overall electronic properties and applications of the doped semiconductor material.

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