What is the significance of n+, p+, and p doping in silicon wafers?

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The discussion clarifies the significance of n+, p+, and p doping in silicon wafers, emphasizing that the "+" indicates heavy doping, resulting in low resistivities of approximately 10^-2 Ohm-cm for n+ and p+ types, compared to about 10 Ohm-cm for standard p-type silicon. This heavy doping enhances conductivity, making n+ and p+ suitable for use in the outer layers of p-i-n diodes, while the intrinsic layer remains undoped and highly resistive. The terminology aligns with established practices in semiconductor physics.

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donquixote17
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I'm reading an article that has n+, p+, and p doped silicon wafers.
http://iopscience.iop.org/0953-8984/10/44/001"
I hadn't heard of n+ or p+ before, just n and p. I noticed in the article that n+ and p+ had really low resistivites (10^-2 Ohm-cm) and p had a resistivity of about 10 Ohm-cm.

So does the plus sign just mean it is heavily doped or is there a different meaning to the + sign?
 
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Yes, the plus sign refers to "extrinsic" doping such that the material is highly conductive. This is used typically in the outer layers of p-i-n diodes. By contrast, the i layer is "intrinsic," or undoped and highly resistive.
 
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I usually use n+ and p+ for Si that is doped heavily enough that the resistivity is down in the range of milliOhm-cm. When it's greater than an Ohm-cm, I call it n or p type. I think that's not completely inconsistent with the literature.
 
Great. Thanks so much!
 

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