The discussion clarifies that the primary difference between p-n junction diodes and p-i-n junction diodes lies in their forward bias resistance and junction capacitance under reverse bias. While the I-V curves of both types appear similar, the p-i-n diode exhibits a slower current rise due to the higher resistance of the intrinsic layer. The characteristics of the forward bias resistance in p-i-n diodes can be further explored through resources such as the "PIN Diode Fundamentals" PDF by Microsemi.
PREREQUISITESElectrical engineers, semiconductor physicists, and students studying diode characteristics and applications will benefit from this discussion.
But how we ca characterize the forward bias resistance of p-i-n diode?Lord Jestocost said:Differences between pin diodes and p-n junction diodes exist in the characteristics of the forward bias resistance and the junction capacitance under reverse bias.