Why is the absorption depth for GaAs more than for Germanium?

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SUMMARY

The absorption depth for Gallium Arsenide (GaAs) is greater than for Germanium (Ge) due to the edge coefficients obtained at specific wavelengths. At 1550 nm, Ge has an edge coefficient of 459.54 / cm, while GaAs has a coefficient of 239.78 / cm at 885.6 nm. This indicates that the optimal thickness of GaAs is thicker than that of Ge, which raises questions about the transmissive properties of both materials at these wavelengths. The discussion highlights the transition of both materials from opacity to transmissivity around 1550 nm.

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A Sofyan
It is based on the value of the edge coefficient I obtained, for Germanium at the wavelength of 1550 nm has a value of 459.54 / cm and GaAs at wavelength 885.6 nm has a value of 239.78 / cm.

If based on the theory of absorption depth (1 / alpha), then the optimal thickness of GaAs is thicker than Ge, and to my knowledge, this seems to be wrong in the application, can anyone explain? Is there something wrong with my understanding?
 
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Both materials, if I'm not mistaken, are in a transition from being opaque at shorter wavelengths to starting to become transmissive at 1550 nm. Is there any reason you think Ge should be more transmissive than GaAs at this particular wavelength?
 
Charles Link said:
Both materials, if I'm not mistaken, are in a transition from being opaque at shorter wavelengths to starting to become transmissive at 1550 nm. Is there any reason you think Ge should be more transmissive than GaAs at this particular wavelength?
It is based on the value of the edge coefficient I obtained, for Germanium at the wavelength of 1550 nm has a value of 459.54 / cm and GaAs at wavelength 885.6 nm has a value of 239.78 / cm.
 

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