|Feb15-07, 12:49 AM||#1|
Crystallization of HfO2
HfO2 is considered to be used as a dielectric but if it crystallizes locally its electrical properties becomes unstable. This happens around 700-800 C, which is below where most semiconductor anneals require. Shouldn't this preclude its use?
|Feb22-07, 02:35 PM||#2|
|Feb22-07, 06:49 PM||#3|
Thanks for the paper link, very interesting. The conducting AFM is telling, since it always detects current through the dielectric, just a matter of degree of uniformity.
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