In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor.
In the context of phosphors and scintillators, doping is better known as activation. Doping is also used to control the color in some pigments.
Hi just a quick question, does the type of impurity (as long as its from group 3 or 5 respectively) used in doping a semiconductor matter in terms of its activation voltage or is it just down to the level of doping?
So for instance a would say a silicon semiconductor doped with 1 to 10,000...
Can someone explain to me in detail formation of depletion zone and doping. I thought i understood this but it confused me when it came to this depletion zone.
If u dope silicone with a substance with 3 valence electrons this forms a hole right? How does atom then behave? Does it polarize...
Homework Statement
Silicon is doped with 10^16 phosphorus atoms/cm^3.
At what temperature would the hole concentration be equal to 10% of the ionized impurity concentration?
2. Homework Equations
I am very confused with the equation I have .
The translation of the question is I...
1. A Silicon wafer is doped with 2*10^16 cm^-3 Boron and 10^16 cm^-3 Phosphorous atoms. Calculate the electron and hole concentrations, the Fermi-level and the resistivity at room temperature
I have no idea how to work out the first part of this question as my lecture notes are lacking in...
I'm reading an article that has n+, p+, and p doped silicon wafers.
http://iopscience.iop.org/0953-8984/10/44/001"
I hadn't heard of n+ or p+ before, just n and p. I noticed in the article that n+ and p+ had really low resistivites (10^-2 Ohm-cm) and p had a resistivity of about 10 Ohm-cm.
So...
Background: Math & Physics undergrad
Reason for asking:
So I was trying to understand semiconductor diodes and realized it all hinged on the PN junction which in turn is worthy of attention because of the effect created by the depletion zone. As I continued on studying up on this I began...
Effect of Doping on Fermi Energy...
I was wondering if anyone could give me a clear answer on why doping a semi conductor raises or lowers the fermi energy depending on n or p type semi conductors. There seem to be a few standard ways of explaining this, some to do with charge conservation or...
Hi all
It can be shown that the product of the hole and electron concentration is constant at a given temperature in a semiconductor, as long as the Fermi level is in the ~middle of the gab.
When we dope semiconductors, do we use the above argument? I.e., does doping work because of this...
Addition of pentavalent impurities to Si will result in each dopant forming bonds with 4 si atoms and, so 1 atom of the dopant will be left out.
On adding a trivalent impurity, the dopant will form a bonds with 3 Si atoms...so how does an electron disappear to make a hole?
Why does the...
Somewhere I read that the reason of halo doping in the MOSFETs is to increase the average doping of channel as the channel length is scaled to lower values. But I think there should be more about why is it done only at the source drain junction, and not somewhere else randomly like at the...
http://www.theglobeandmail.com/servlet/story/RTGAM.20080410.wnature10/BNStory/Science/?page=rss&id=RTGAM.20080410.wnature10
hmhmhmh... :devil:
Next, I would like to know if that's effective in reality, or mostly placebo.
Can someone tell me what Doping away from half Filling means? I see it everywhere. Although I can't find referance to it in Kittel or Mermin, although I might not be looking hard enough. I have and idea of what it is. Half filling refers to the doping where the Brillouin Zone is half holes and...
I understand the principle behind p and n type doping, but I don't understand how such a small amount, 1ppm, can cause such a massive change in the fermi energy.
as I understand it:
for the intrinsic case the number of electrons exactly matches the number of holes and the fermi energy...
How delocalization of the states in the valence band occurs. Can somebody explain how many kinds of localization of states are there in semiconductors.