I thought it wrong.
I have tried and solve it like : Boron is acceptor then Na = 10^14
by the charge neutrality relationship, n + Nd = p + Na
this is doped semiconductor, then n = Nd - Na and p = ni^2 / n
but what is the value of Nd ?
I have a homework on Solid state device
the question is :"If a Si sample is doped with 10^14 boron atoms per cm3 then determine the
carrier concentration in the Si sample at 300K."[/b]
I thought that the concentration is calculate by
n = 2[(2pi*un*kT/h^2)]^(3/2)
is this right formula ...
I have a small question that can't solve.
How long does it take an average electron to drift 1um in pure silicon in an electric field of 10^4 V/m ?
drift velocity v_d = I / (n*q*A)
but don't know how to calculate
can you help me ?
thank you.