Recent content by becon

I thought it wrong. I have tried and solve it like : Boron is acceptor then Na = 10^14 by the charge neutrality relationship, n + Nd = p + Na this is doped semiconductor, then n = Nd - Na and p = ni^2 / n but what is the value of Nd ?

I have a homework on Solid state device the question is :"If a Si sample is doped with 10^14 boron atoms per cm3 then determine the carrier concentration in the Si sample at 300K."[/b] I thought that the concentration is calculate by n = 2[(2pi*un*kT/h^2)]^(3/2) is this right formula ...

I have a small question that can't solve. How long does it take an average electron to drift 1um in pure silicon in an electric field of 10^4 V/m ? drift velocity v_d = I / (n*q*A) but don't know how to calculate can you help me ? thank you.