Ah ok that's great, I figured it might have something to do with shallow and deep levels but was a little confused by the fact that some of the "deep" levels were actually close to band edges. It was only on further reading that I discovered the words deep and shallow can be a little misleading...
Also here - http://www.iue.tuwien.ac.at/phd/entner/node14.html
In section 3.1.1 the article talks of donor-like levels located in the lower half of the band gap, and acceptor-like levels located in the upper half of the band gap.
Apologies for this.
For example, the paper "Negative-U Properties for Point Defects in Silicon" by Watkins (Phys. Rev Letters, Vol. 44, no.9) shows in its first figure vacancy states just above the valence band edge which are labelled donor states.
Hi all,
I think I understand the concept of doping a group IV semiconductor material with a group V atom which has one extra valence electron to "donate" to the conduction band, or doping with a group III atom with one too few electrons which will "accept" an electron from the lattice and...
Hi there, I was wondering if anybody would be able to help me on a question I have regarding the Sokolov-Ternov effect.
1. I understand that an electron can be configured "spin up" or "spin down" and that the down state has a higher energy. However, apparently the probability for transition...