Absorption in Indirect Bandgaps

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Discussion Overview

The discussion revolves around the absorption processes in indirect bandgap semiconductors, focusing on the role of phonons in facilitating electron transitions from the valence band to the conduction band. Participants explore the mechanics of these transitions, the conditions under which they occur, and the implications of temperature on absorption characteristics.

Discussion Character

  • Exploratory
  • Technical explanation
  • Debate/contested
  • Mathematical reasoning

Main Points Raised

  • Some participants propose that phonons are necessary for indirect bandgap absorption, as they provide the momentum required for electron transitions that photons alone cannot supply.
  • One participant questions the mechanics of phonon interaction with electrons, wondering if phonons collide with electrons to transfer momentum.
  • Another participant explains the absorption process as a transition from bonding to anti-bonding orbitals, suggesting that this alters atomic oscillation and involves phonon distributions described by the Franck Condon factor.
  • A participant presents a mathematical framework for phonon absorption and emission during electron transitions, emphasizing the role of dipole matrix elements and nuclear displacements.
  • Some participants assert that at absolute zero, only direct absorption occurs, while indirect transitions require phonons and are forbidden at low temperatures.
  • There is a claim that indirect transitions can still occur at very low temperatures, although they may be weak and less likely without phonons present.
  • One participant references experimental observations regarding silicon's transparency to certain wavelengths at low temperatures, suggesting that indirect transitions are temperature-dependent.
  • Another participant notes that the likelihood of indirect transitions increases with the presence of phonons, but does not completely vanish at absolute zero.
  • A later reply discusses the thermochromic effect resulting from indirect transitions, indicating a connection between temperature and absorption characteristics.

Areas of Agreement / Disagreement

Participants express multiple competing views regarding the necessity of phonons for indirect transitions, particularly at low temperatures. While some assert that indirect transitions are forbidden at absolute zero, others argue that they can still occur, albeit weakly. The discussion remains unresolved with no clear consensus on the conditions under which indirect transitions can happen.

Contextual Notes

Participants highlight limitations related to temperature effects on absorption processes, the dependence on phonon presence, and the complexity of the mathematical treatment of the phenomena discussed. There are also unresolved assumptions regarding the mechanics of phonon interactions with electrons.

pjcircle
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Hi guys I just wanted to make sure I was thinking about this the right way. So in indirect bandgap semiconductors absorption needs a phonon to assist the electron to the conduction band from the valence band because a photon has virtually no momentum and only contributes energy to the electron while a phonon can supply the momentum needed to sort of go horizontally (k axis) on the band structure diagram. I am just confused with what the phonon actually does with the electron. Does it collide with the electron to transfer its momentum? Also was wondering what effect does the actual placement of the minimum of the conduction band and maximum of the valence band have on the phonon needed to make the jump. I am assuming if less momentum is needed to make the jump (min on left max on right) the phonon needed would have to have a negative momentum relative to the maximum point to assist the electron? Thanks for the help!
 
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It is probably helpful to think of the absorption process to be localized in space. Basically, you are transferring an electron from a bonding orbital between two atoms into an anti-bonding one. This will change the equilibrium bond length between the two atoms and therefore classically, they will start to oscillate. In a QM treatment, you get a distribution of the amount of phonons released instead which is given by the Franck Condon factor.
 
It is probably helpful to think of the absorption process to be localized in space. Basically, you are transferring an electron from a bonding orbital between two atoms into an anti-bonding one. This will change the equilibrium bond length between the two atoms and therefore classically, they will start to oscillate. In a QM treatment, you get a distribution of the amount of phonons released instead which is given by the Franck Condon factor.
 
Correct me if I'm wrong, but I assumed that when making the jump, the electron could either absorb or emit a phonon.

Meaning that when emitting a phonon,

ħωphoton = Eg + ħωphonon

And absorbing

ħωphoton = Eg - ħωphonon

Please wait for someone else to respond to my comment before you take it as truth however, I'm still new to this topic.
 
I just realized that my previous explanation is not correct. Here is a (hopefully) better one.
In the dipole approximation (which corresponds to the neglect of the momentum of the photon), the intensity is proportional to the square of the dipole matrix element
##\langle i| d|f \rangle##, where i and f are the initial and final state, both electronic and vibrational. These states depend on the nuclear displacements e.g. for f as
## | f(k)\rangle =|e_f(k)\rangle |0_v\rangle+ |e_f(0)\rangle \langle e_f(0)| \partial H/\partial Q(k) |e_f(k)\rangle/(E_f(0)+E_v(k)-E_f(k)) Q(k)|0_v \rangle## in first order of perturbation theory.
Here ##|e_f(k)\rangle## is the electronic wavefunction for the undisplaced lattice and ##|0_v\rangle## the vibrational ground state wavefunction of the lattice.
The operator Q of the nuclear displacement either creates or destroys one phonon, so that ##Q(q)|0_v\rangle\propto a^+_q |0_v\rangle=|1_v(q) \rangle##.
Similarly, the ground state reads
## | i(0)\rangle =|e_i(0)\rangle |0_v\rangle+ |e_i(k)\rangle \langle e_i(k)| \partial H/\partial Q(-k) |e_i(0)\rangle/(E_i(k)+E_v(-k)-E_i(0)) Q(-k)|0_v \rangle##.
Taking into account that only electronic dipole matrix elements between states with the same k are non-vanishing, you see that one phonon will be generated or distroyed in the indirect transition.
 
You need phonons to be present to enable an indirect absorption process.
At absolute zero only direct absorption occurs and indirect transitions are forbidden.
The indirect transitions at high T occur between vibronic states and these are not occupied at T~0 K.
 
my2cts said:
You need phonons to be present to enable an indirect absorption process.
At absolute zero only direct absorption occurs and indirect transitions are forbidden.
The indirect transitions at high T occur between vibronic states and these are not occupied at T~0 K.
No, because phonons need not be present beforehand. They can be emitted in the transition.
 
DrDu said:
No, because phonons need not be present beforehand. They can be emitted in the transition.
At T near zero only direct bandgap transitions are allowed. That means that in transitions from the ground state no phonons are emitted. Of course you can argue about high T. A transition from one vibronic state to another in a sense involves the absorption or emission of one or more phonons.
In any case phonons need to be present beforehand.
 
I did derive in post #5 that an indirect transirion is even possible starting from the vibronic ground state containing no phonons. Do you have any proof for your claim?
 
  • #10
I have sources that at low T silicon becomes transparent for red light and longer wavelengths according to this link.
"For example, silicon is opaque to visible light at room temperature, but transparent to red light at liquid helium temperatures, because red photons can only be absorbed in an indirect transition."
http://en.wikipedia.org/wiki/Direct_and_indirect_band_gaps#Implications_for_light_absorption
A reference to a scientific paper is not attached there, however.
I expect this behaviour also from the k-values at 20 C at
http://refractiveindex.info/?shelf=main&book=Si&page=Vuye-20C
If the temperature goes to 0 K, the absorption at wavelengths longer than say 500 nm will vanish.
So experiment says that a transition at or near the indirect bandgap energy is forbidden at 0 K, when there are no phonons present.
Clearly visible is the absorption at 354 nm corresponding to the direct band gap, which is at 3.5 eV (http://arxiv.org/pdf/1211.0591.pdf).
Only the direct transition is allowed if there are no phonons.
Or is your claim that ecen in the direct transition phonons are emitted ?
 
  • #11
Ok, clearly the likelhood for an indirect transitions increases when there are phonons present. Nevertheless, it does not vanish completely at T=0.
 
  • #13
Interesting, thank you. I would't have guessed that these indirect transitions give rise to so strong thermochromic effect.
 

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