Application of Gauss' Laws: Large area parallel plate capacitor

Click For Summary
SUMMARY

The discussion focuses on the application of Gauss' Law to determine the electric field strength inside a large area parallel plate capacitor. The electric field strength E is calculated using the formula E = q / (A ε₀), where q is the charge, A is the area, and ε₀ is the permittivity of free space. When the positive charge is doubled, the electric field strength also doubles, resulting in a 100% increase in strength. This analysis confirms the uniformity of the electric field within the capacitor regardless of the charge's sign.

PREREQUISITES
  • Understanding of Gauss' Law and its application in electrostatics.
  • Familiarity with the concept of electric field strength and its calculation.
  • Knowledge of the properties of parallel plate capacitors.
  • Basic algebra for manipulating equations and calculating percent changes.
NEXT STEPS
  • Study the derivation of Gauss' Law in electrostatics.
  • Explore the effects of varying charge distributions on electric fields.
  • Learn about the implications of dielectric materials in capacitors.
  • Investigate the relationship between capacitance, charge, and voltage in parallel plate capacitors.
USEFUL FOR

Students of physics, electrical engineers, and anyone interested in understanding the principles of electrostatics and capacitor behavior.

knowlewj01
Messages
100
Reaction score
0

Homework Statement



The plates of a large area parallel plate capacitor of area A are separated by a short
distance. The plates carry an equal but opposite charge \pm q.
(a) What is the electric field strength E(q,A) inside the capacitor?
(b) By how many percent does the electric field strength change if the positive charge is doubled?

Homework Equations



\oint\bf{E.n} dS = 4\pi k Q

Electric Field inside a capacator: E = \frac{Q}{A \epsilon_0}

The Attempt at a Solution



the electric field inside a parallel plate capacator is uniform so it does not matter where we do the surface integral \oint\bf{E.n} dS
i choose to do the integral on a plane equal in area to the area of the capacators, i will call this area A.

(a)
\oint\bf{E.n} dS = 4\pi k Q = \frac{q}{\epsilon_0}

E A = \frac{q}{\epsilon_0}

E = \frac{q}{A \epsilon_0}

this is in agreement with the given formula i found.

(b) double the positive charge:

\oint\bf{E.n} dS = 4\pi k Q = \frac{2q}{\epsilon_0}

E = \frac{2q}{A \epsilon_0}

so this is twice that of in the first case. is this the right way to look at this? i thought what would be the difference if i changed the negative one instead, since in this solution i am ignoring the fact that there is a negative charge at all. i think that it would have the same effect.
 
Physics news on Phys.org
the percent change can be worked out as:percent change = (\frac{2q}{A \epsilon_0} - \frac{q}{A \epsilon_0})/ \frac{q}{A \epsilon_0} * 100percent change = 100%
 

Similar threads

Replies
11
Views
3K
  • · Replies 6 ·
Replies
6
Views
2K
  • · Replies 18 ·
Replies
18
Views
3K
Replies
6
Views
1K
  • · Replies 11 ·
Replies
11
Views
1K
  • · Replies 8 ·
Replies
8
Views
2K
Replies
1
Views
2K
  • · Replies 11 ·
Replies
11
Views
2K
  • · Replies 20 ·
Replies
20
Views
4K
Replies
1
Views
1K