Bending of vacuum level in pn junction

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SUMMARY

The discussion centers on the bending of the vacuum energy level at a pn junction, where the vacuum level is higher on the p-side than on the n-side. This indicates that the absolute energy of an electron just outside the material on the p-side is indeed higher than that on the n-side. The phenomenon is crucial for understanding charge carrier behavior in semiconductor devices. Reference materials include Antoine Kahn's article on Fermi level, work function, and vacuum level.

PREREQUISITES
  • Understanding of pn junctions in semiconductor physics
  • Familiarity with vacuum energy levels and their significance
  • Knowledge of Fermi levels and work functions
  • Basic principles of charge carrier dynamics in materials
NEXT STEPS
  • Read "Fermi level, work function and vacuum level" by Antoine Kahn
  • Explore the concept of energy band diagrams in semiconductors
  • Investigate the role of doping in altering energy levels in pn junctions
  • Learn about charge carrier recombination and generation processes
USEFUL FOR

Students and professionals in semiconductor physics, electrical engineers, and researchers focusing on material science and device fabrication will benefit from this discussion.

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Homework Statement
Does an electron that is just outside the material(near the surface) on the p-side higher than that on the n-side in terms of absolute energy level?
Relevant Equations
N/A
When both isolated p-type and n-type materials join together and form pn-junction as picture attached, the vacuum energy level also bend so it is higher on the the p-side than on the n-side. Does that mean the absolute energy of an electron that is just outside the material on the p-side higher than the absolute energy of an electron that is just outside the material on the n-side?

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Reference:
https://physics.stackexchange.com/q...ng-of-vacuum-level-in-semiconductor-junctions
 
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