Engineering Bending of vacuum level in pn junction

AI Thread Summary
In a pn-junction, the vacuum energy level bends, being higher on the p-side than on the n-side. This bending indicates that the absolute energy of an electron just outside the material on the p-side is indeed higher than that on the n-side. The difference in energy levels affects electron behavior and movement across the junction. Understanding this concept is crucial for analyzing semiconductor properties and device functionality. The referenced article provides further insights into the relationship between Fermi level, work function, and vacuum level in this context.
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Homework Statement
Does an electron that is just outside the material(near the surface) on the p-side higher than that on the n-side in terms of absolute energy level?
Relevant Equations
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When both isolated p-type and n-type materials join together and form pn-junction as picture attached, the vacuum energy level also bend so it is higher on the the p-side than on the n-side. Does that mean the absolute energy of an electron that is just outside the material on the p-side higher than the absolute energy of an electron that is just outside the material on the n-side?

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Reference:
https://physics.stackexchange.com/q...ng-of-vacuum-level-in-semiconductor-junctions
 
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