SUMMARY
The discussion focuses on the cleaning procedures for SGOI (Silicon-Germanium-On-Insulator) and SiGe (Silicon-Germanium) substrates, specifically addressing initial cleaning, oxide etching, photoresist removal, and impurity removal. It confirms that Piranha solution is suitable for cleaning SiGe substrates, while caution is advised regarding the use of HF (Hydrofluoric Acid) due to potential slow etching effects. The participants agree that established Si wafer cleaning methods can be adapted for SiGe substrates with careful consideration of etching rates.
PREREQUISITES
- Understanding of SGOI and SiGe substrate properties
- Knowledge of chemical cleaning processes, specifically Piranha solution and HF
- Familiarity with photoresist removal techniques
- Awareness of impurity types and their removal methods
NEXT STEPS
- Research the specific etching rates of HF on SiGe substrates
- Explore alternative cleaning solutions for organic and metallic impurity removal
- Investigate the effectiveness of Piranha solution on various substrate materials
- Learn about advanced cleaning techniques for semiconductor substrates
USEFUL FOR
This discussion is beneficial for semiconductor fabrication engineers, materials scientists, and anyone involved in the cleaning and preparation of SGOI and SiGe substrates for microfabrication processes.