Compensation Doping: Adding Boron Atoms

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SUMMARY

The discussion focuses on the process of compensation doping in semiconductors by adding boron atoms. The participant suggests that due to the higher concentration of boron atoms (p = 3*1017 cm-3), they can calculate the electron concentration (n) using the equation n = (1.43*1010)2 / p. This method leverages the relationship between hole concentration and intrinsic carrier concentration to derive the electron concentration effectively.

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Homework Statement
The intrinsic carrier concentration of silicon at room temperature is ##1.43*10^{10}## per cubic centimeter
If boron atoms with the concentration of ##3*10^{17}##per cubic centimeter are added to the intrinsic Si, estimate the electron and hole concentration at room temperature.
Relevant Equations
Intrinsic: n=p=ni
Extrinisc: np=ni^2
Hi all,

So I'm confused how do I do this question when I add boron atoms. This is my take/attempt on this question though.

Since there are much more boron atoms per cubic centimeters as compared to the number of holes, can I assume that p = ##3*10^{17}## now, and simply find n by using np=ni^2 whereby n = ##(1.43*10^{10})^2 / 3*10^{17}## ?

Cheers
 
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