Compensation Doping: Adding Boron Atoms

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In summary, compensation doping is a process that involves intentionally adding impurities to a material in order to balance out the presence of other impurities. This is commonly done in semiconductors to control their electrical properties. By adding boron atoms, which have one less valence electron than other impurities, the overall charge of the material can be balanced. This allows for precise control of the material's electrical properties, resulting in improved device performance and reliability. Compensation doping with boron atoms is commonly used in the production of electronic devices and specialized materials for sensors and detectors. However, there are potential drawbacks, such as introducing defects in the material and the complexity of the process.
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jisbon
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Homework Statement
The intrinsic carrier concentration of silicon at room temperature is ##1.43*10^{10}## per cubic centimeter
If boron atoms with the concentration of ##3*10^{17}##per cubic centimeter are added to the intrinsic Si, estimate the electron and hole concentration at room temperature.
Relevant Equations
Intrinsic: n=p=ni
Extrinisc: np=ni^2
Hi all,

So I'm confused how do I do this question when I add boron atoms. This is my take/attempt on this question though.

Since there are much more boron atoms per cubic centimeters as compared to the number of holes, can I assume that p = ##3*10^{17}## now, and simply find n by using np=ni^2 whereby n = ##(1.43*10^{10})^2 / 3*10^{17}## ?

Cheers
 
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Looks good.
 
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