Device simulation with Silvaco ATLAS

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To simulate interface traps in a power MOSFET using Silvaco ATLAS, adding a sheet charge at the interface is recommended, which is managed through boundary conditions. Users with older versions of ATLAS may face challenges, such as the inability to utilize a self-created SPECT file as an input. Assistance is sought for plotting the electroluminescence (EL) of the organic04 example. The discussion highlights the need for specific guidance on input file compatibility and simulation parameters. Effective simulation requires understanding the tool's capabilities and limitations regarding interface traps and file formats.
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How can I give interface traps while simulating a power MOSFET in Silvaco ATLAS tool?
 
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One way to simulate interface traps in silvaco is to add a sheet charge at the interface. This is controlled by the boundary conditions defined at the interface.
 
i have an old version of atlas and it dosent have spectrum library so i create a SPECT file myself but i can't use it as an input file,please help me, i want to plot EL of organic04 example
 
I am trying to understand how transferring electric from the powerplant to my house is more effective using high voltage. The suggested explanation that the current is equal to the power supply divided by the voltage, and hence higher voltage leads to lower current and as a result to a lower power loss on the conductives is very confusing me. I know that the current is determined by the voltage and the resistance, and not by a power capability - which defines a limit to the allowable...

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