Main Question or Discussion Point
Suppose we have an interface between a semiconductor and a liquid electrolyte that contains a redox couple whose redox level is ER. Let Ecs be the edge of the semiconductor conduction band at the interface. Is Ecs-ER constant independent of the doping level in the semiconductor? The papers I read seam to imply this but it is hard to me to accept it. Any hints or recommended reference will be very appreciated.