Energy levels at semiconductor/liquid electrolyte interface

  • #1

Main Question or Discussion Point

Suppose we have an interface between a semiconductor and a liquid electrolyte that contains a redox couple whose redox level is ER. Let Ecs be the edge of the semiconductor conduction band at the interface. Is Ecs-ER constant independent of the doping level in the semiconductor? The papers I read seam to imply this but it is hard to me to accept it. Any hints or recommended reference will be very appreciated.
 

Answers and Replies

  • #2
18,037
7,390
I'm sorry you are not generating any responses at the moment. Is there any additional information you can share with us? Any new findings?
 
  • #3
16
2
I'm not really sure about it but might they assume the pinning of the Fermi level at the interface due to surface states?
 
  • #4
I'm not really sure about it but might they assume the pinning of the Fermi level at the interface due to surface states?
You are right about the pinning of Fermi level in the case where there are surface states.
But in the absence of surface states, it seems that the position of the conduction band edge at the surface is fixed even if dilute doping is introduced.

I actually found some experimental results that support this claim, but still do not have an understanding for why this has to be the case.
 
  • #5
16
2
So any news about that? I'm semi-interested since it has a minor role in one of my measuring techniques in my research.
 

Related Threads for: Energy levels at semiconductor/liquid electrolyte interface

  • Last Post
Replies
1
Views
1K
  • Last Post
Replies
11
Views
2K
Replies
21
Views
75K
  • Last Post
Replies
1
Views
4K
  • Last Post
Replies
12
Views
4K
  • Last Post
Replies
1
Views
2K
Replies
3
Views
5K
Replies
3
Views
7K
Top