Expression for the internal potential

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SUMMARY

The discussion centers on deriving an expression for the internal electric potential in an isolated n-type silicon sample. The internal electric field arises due to the space charge region, which counteracts the diffusion process. The user, Ana, describes a silicon sample with a linear charge density variation from 1017 to 6 x 1016 cm-3 over a length of 2 µm, with electron mobility set at 1000 cm2/V·s. The conversation emphasizes the need for clarity in describing setups to facilitate effective assistance.

PREREQUISITES
  • Understanding of n-type silicon and its charge carrier dynamics
  • Familiarity with space charge regions and their effects on electric fields
  • Knowledge of electric potential and field equations in semiconductor physics
  • Basic principles of charge density and its relation to electric fields
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  • Research the derivation of electric potential in semiconductor materials
  • Study the effects of charge density variations on electric fields in silicon
  • Learn about the mathematical modeling of space charge regions
  • Explore the application of Poisson's equation in semiconductor physics
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Students and professionals in semiconductor physics, electrical engineers, and researchers focusing on the behavior of n-type silicon and electric field dynamics in isolated samples.

Ana.B
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Any one has any ideas where can i find an expression for the internal potential that results in an isolated silicon sample...

i know why this internal electric field is set up due to the space charge region... having the diffusion process that tends to generate more space change and the electric field itself generated by the space chare that tends to counteract the diffusion...

thnks
 
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Potential with respect to what?
 
Hi:)
basically when a silicon sample is isolated, there will be an internal electric field set up due to the space charge region ...now i need to derive an expression for this internal potential field... I am not sure what i should consider
 
Your question is unclear.
Try describing your setup in more detail.
 
Excuse me about that its my first time using this sort of help... basically i have the following...

first i have an n type silicon , and electrons are supplied to it to keep the concentration constant. and then the current density is found... by the data given are 2um long varies linearly from 10^17 at one end to 6 X 10^16. un(mobility) being 1000...

now this silicon is isolated and explained that it will have an internal electric field and i need to figure out an expression for the internal potential and then i have to calculate it... i don t know what i should consider... hopefully i made myself clearer.thanks
 
Better, but making oneself clear is a skill in its own right. :smile:

Does your question involve something like this?
http://www.springerlink.com/content/n03vj82865q27173/

If you are saying that the charge density is linear then I would imagine that that the field gradient would be linear as well, but I really have no idea if this applies to your question.
 
Thanks for your help:) You actually did help me:) I guess you have a great skill :)

Regards,

Ana
 

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