Forming new energy levels in semiconductor by UV light

In summary, a new type of energy storage, called "Battenice", uses quantum principles to store energy. It involves using n-type metal-oxide semiconductor particles covered with an insulating film. These particles form new energy levels in the bandgap when exposed to ultraviolet light during the manufacturing process. This allows for the storage and release of electrons, making the device function as a rechargeable battery. The manufacturing process involves sputtering negative and positive electrodes, as well as spin-coating and calcination of the TiO2 layer. The application of UV light creates new energy levels in the TiO2 layer, contributing to the battery's charge and discharge capabilities. The exact mechanism of how the energy levels are formed is still unclear,
  • #1
Stanley514
411
2
A new type of energy storage described which uses quantum way to store energy.
''Battenice''.

In brief, the cell uses n-type metal-oxide semiconductor (e.g. titanium dioxide (TiO2), tin oxide (SnO2) and zinc oxide (ZnO)) particles covered with an insulating film (an insulating resin or inorganic insulator) for the charge layer.

A number of new energy levels are formed in the bandgap (gap between valence and conduction bands) of the n-type metal-oxide semiconductor by applying ultraviolet light to the charge layer under certain conditions in the manufacturing process. Electrons come into the levels at the time of charging the cell, and they are released at the time of discharging it. As a result, it functions as a rechargeable battery.

First, negative electrodes (indium oxide doped with tin or ITO) and n-type metal oxide semiconductor layer (TiO2) are formed on a substrate by sputtering. Then, fatty acid titanium, silicone oil and solvent are mixed and stirred, and the TiO2 layer is spin-coated with it. It is dried at a temperature of 50°C for 10 minutes and calcinated at a temperature of 300-400°C for 10 to 60 minutes.

As a result, the fatty acid titanium is decomposed, forming a TiO2 particulate layer coated with silicone. When an ultraviolet light with a wavelength of 254nm is applied to it with an intensity of 20mW/cm2 for about 40 minutes, a number of new energy levels, which contribute to charge and discharge of the battery, are formed in the bandgap of TiO2. The p-type metal oxide semiconductor (NiO) and positive electrodes are formed by sputtering.
http://techon.nikkeibp.co.jp/english/NEWS_EN/20140224/335902/

How exactly new energy levels could form under UV light? What do the mean?
 
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  • #2
I would expect some chemical reaction. UV light should not be able to dislocate atoms in a crystal, but breaking some bonds in some of the materials there is probably possible.
 

1. What is the purpose of forming new energy levels in semiconductors using UV light?

The purpose of forming new energy levels in semiconductors using UV light is to alter the electronic band structure of the semiconductor material. This can lead to improved electrical conductivity and other desirable properties for use in electronic devices.

2. How does UV light create new energy levels in semiconductors?

UV light can cause electrons to be excited to higher energy levels within the semiconductor material, creating additional energy levels or modifying existing ones. This can be achieved through processes such as photoionization or photoluminescence.

3. What types of semiconductors can be formed into new energy levels using UV light?

Most types of semiconductors can be formed into new energy levels using UV light, including silicon, germanium, gallium arsenide, and others. The specific properties and processes may vary depending on the material used.

4. What are some potential applications of forming new energy levels in semiconductors by UV light?

The ability to modify the electronic band structure of semiconductors using UV light has a wide range of potential applications. This includes the development of more efficient solar cells, improved LED and laser diode technology, and advancements in optoelectronics and nanotechnology.

5. Are there any potential risks or drawbacks to forming new energy levels in semiconductors using UV light?

While UV light can be a useful tool for creating new energy levels in semiconductors, there are potential risks and drawbacks to consider. These may include damaging the semiconductor material if too much energy is applied, as well as potential health hazards from exposure to UV radiation. Proper safety measures should always be taken when working with UV light in a laboratory setting.

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