SUMMARY
Mono C-silicon, when cooled with helium, can absorb high-intensity lasers in the wavelength range of 900-1100 nm, although some infrared absorption is expected. Silicon exhibits transparency for photon energies below the indirect band gap of Eg=1.1 eV at room temperature, allowing light to pass through without significant absorption. The increase in material temperatures due to ultraviolet and visible light occurs through the same mechanism as any light, where absorption leads to thermal excitation. At low temperatures, the larger direct bandgap influences absorption characteristics.
PREREQUISITES
- Understanding of Mono C-silicon properties
- Knowledge of photon energy and band gap concepts
- Familiarity with thermal effects in semiconductor materials
- Basic principles of light absorption and transmission
NEXT STEPS
- Research the absorption characteristics of silicon at various temperatures
- Learn about the implications of direct and indirect band gaps in semiconductors
- Explore the effects of different wavelengths on material heating
- Investigate helium cooling techniques for semiconductor applications
USEFUL FOR
Materials scientists, semiconductor engineers, and physicists interested in photon absorption properties and thermal effects in silicon-based materials.